The application of a 600 keV heavy ion implanter is described. High energy B+ and high energy doubly charged P2+ were implanted in silicon for p- and n-wells isolation in CMOS ICs. 600 keV Ar+ was implanted in silicon to form a damage layer, the perfect layer near the surface of the Si-wafer was made by defect gettering- Si+ Mg+ and O+ were implanted in GaAs, and the uniformity of the threshold voltage (Vth) of GaAs MESFETs buried with Mg or O layers was improved. High activation efficiencies of Mg+ and Si+ implanted GaAs after RTA were obtained by using a specially designed graphite heater, and the activation efficiencies were 100% and 92%, respectively. The isolation of GaAs and InGaAsP/InP and other compound semiconductors, the characteristics of LiNbO3 and other insulators after high energy ion implantation and molecular ion implantation have also been investigated using this implanter.

The application of a 600 keV heavy ion implanter

The beam optics research for a high energy (over 600 keV), high mass resolving power (over 210) and very high beam transportation efficiency (over 85%) ion implanter is described. The analytical equation for a constant gradient accelerating tube is given, and the beam optics design has been carried out taking into consideration the space-charge effect in the accelerating tube and a second-order aberration in the analyzing magnet. The ion beam was successfully transported over 19 m, and the beam current on the implantation target for Mg + (total), Ar + , P + , and Cd + (total) was ⩾ 50, 200, 100 and ⩾ 50 μA, respectively, at 630 keV.

Beam optics research for a 600 keV heavy ion implanter

A new 600 keV heavy ion implanter at the Shanghai Institute of Metallurgy is described. Beam optics design has been carried out where space charge effect in the accelerating tube and second order aberrations in the analyzing magnet were considered. The highest energy for single charged ions is 630 keV. The mass numbers range from 1 to 210 and the resolving power M/ΔM is 208 (208Pb+, ∼ 10 μ A). Beam currents on the implantation target for Mg+ (total), Ar+, P+ and Cd+ (total) are 50 or more, 200, 100 and 50 or more μA, respectively, at 630 keV.

A 600 keV research heavy ion implanter

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Author Correction: Measurement of the generalized spin polarizabilities of the neutron in the low-Q2 region

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A 600 keV research heavy ion implanter

Author Correction: Measurement of the generalized spin polarizabilities of the neutron in the low-Q2 region