Lu Chunhui

TL;DR: In this article, a method for efficiently passivating the back side of a crystalline silicon solar cell is described. But the method is characterized by comprising the following steps of reversely inserting etched silicon chip into a PECVD (plasma enhanced chemical vapor deposition) graphite boat, and feeding to a pECVD furnace tube; vacuumizing the furnace tube, testing the pressure, and depositing a first silicon oxynitride film, wherein the temperature is 460 DEG C; the ammonia flow is 2.5-3.8slm; the silicane

TL;DR: In this paper, a method for preparing an antireflection film with the potential induced degradation (PID) effect resistance is presented, which includes the following steps: vacuumizing a furnace tube under a pressure of 80mTorr for 4min under the condition that the inner temperature of the furnace is 420 DEG C, pretreating a silicon wafer at 420 deG C under a high pressure of 1700m Torr, and performing a pressure test under the conditions that inner pressure of the device is kept constant at 50m torr for 0.2-0

TL;DR: In this paper, a solar energy electrical conduction slurry and a preparation method for its preparation is described. But the technical scheme includes that lead is not included, good electrical conductivity, weather resistance performance and chemical resistance are provided, the photoelectric conversion efficiency of a battery is high, and the low warp performance is good.

TL;DR: In this article, a method for fabricating anti-reflection film with anti-PID effect is presented, which consists of vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420.