Louis-Andre Hamel
Université de Montréal
57 Papers
341 Citations
Louis-Andre Hamel is an academic researcher from Université de Montréal. The author has contributed to research in topics: Detector & Particle detector. The author has an hindex of 13, co-authored 54 publications.
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Papers
Simulation of charge collection processes in semiconductor CdZnTe γ-ray detectors
Mathieu Benoit,Louis-Andre Hamel +1 more
TL;DR: In this article, a Monte Carlo algorithm for the simulation of charge collection behavior of semiconductor γ-ray detectors is presented, which takes into account the electrical properties of the detectors, transport properties of material, trapping induced by impurities, experimental setup characteristics and γ -ray-matter interaction processes.
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Charge transport and signal generation in cdte pixel detectors
TL;DR: In this article, the current and charge signals on individual pixels of CdTe γ-ray cameras are calculated by solving the continuity equations, and the current induced through an individual pixel from which the charge signal is also obtained.
43
Signal generation in CdZnTe strip detectors
Louis-Andre Hamel,John R. Macri,Carl Michael Stahle,J. Odom,F. Birsa,Peter K. Shu,F.P. Doty +6 more
- 21 Oct 1995
TL;DR: In this article, the free carrier density distributions following the absorption of a /spl gamma/ray are calculated by solving the continuity equations, combined with the strip weighting field, this provides the signal induced in the strip.
31
Three-dimensional imaging and detection efficiency performance of orthogonal coplanar CZT strip detectors
Mark L. McConnell,John R. Macri,James M. Ryan,K. Larson,Louis-Andre Hamel,G. Bernard,C. Pomerleau,O. Tousignant,Jean-Charles Leroux,Valentin T. Jordanov +9 more
- 21 Nov 2000
TL;DR: In this paper, the authors report on recent three-dimensional imaging performance and detection efficiency measurements obtained with 5 mm thick prototype CdZnTe detectors fabricated with orthogonal coplanar anode strips.
Response of amorphous silicon p-i-n detectors to ionizing particles
TL;DR: In this article, the performance of thin film p-i-n amorphous silicon detectors with intrinsic layer thicknesses ranging from 3 to 18 μm was investigated and their response to α particles of 1.6 to 14.6 MeV was studied.
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