Cu2ZnSn(S1–xSex)4 (CZTSSe) alloys are promising candidates for low-cost and high-efficiency thin-film solar cells. Compared to CdTe and Cu(InxGa1–x)Se2, CZTSSe uses chemicals found more abundantly on earth. This key aspect as well as its optical properties—band gap range of 1.0–1.5 eV and absorption coefficient larger than 104 cm–1—makes CZTSSe a feasible option for photovoltaic thin-film technologies scalable to TW/year. The key limitation to high efficiency in this technology remains a deficit in the open-circuit voltage with respect to the band gap: many groups have linked this drawback of CZTSSe solar cells to the presence of minor phases. This review aims to summarize what is known about CZTSSe minor phases and their impact on device characteristics.

Impact of Minor Phases on the Performances of CZTSSe Thin-Film Solar Cells

Towards environmentally benign approaches for the synthesis of CZTSSe nanocrystals by a hot injection method: a status review.

Effect of CZTSe BSF and minority carrier life time on the efficiency enhancement of CZTS kesterite solar cell

Enhancement of the conversion efficiency of Cu2ZnSnS4 thin film solar cell through the optimization of some device parameters

Enhancement in efficiency of CZTS solar cell by using CZTSe BSF layer

Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 °C for 3 h Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm−1 in the energy range 1.5–3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm−3, 6.96 Ωcm, and 12.9 cm2/(Vs), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

http://iopscience.iop.org/article/10.1088/1674-4926/33/2/022002/pdf

Photoelectric properties of Cu 2 ZnSnS 4 thin films deposited by thermal evaporation

As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that, the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 °C, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 °C, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10−4 Ωcm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

https://iopscience.iop.org/article/10.1088/1674-4926/32/1/013002/pdf

Photoelectric properties of ITO thin films deposited by DC magnetron sputtering

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Photoelectric properties of Cu 2 ZnSnS 4 thin films deposited by thermal evaporation

Photoelectric properties of ITO thin films deposited by DC magnetron sputtering