Growth of high-quality AlGaN epitaxial films on Si substrates

A series of Sn added TiS2 (TiS2:Sn
 x
 ; x = 0, 0.05, 0.075 and 0.1) were prepared by solid state synthesis with subsequent annealing. The Sn atoms interacted with sulfur atoms in TiS2 and formed a trace amount of misfit layer (SnS)1+m(TiS2−δ)n compound with sulfur deficiency. A significant reduction in electrical resistivity with moderate decrease in the Seebeck coefficient was observed in Sn added TiS2. Hence, a maximum power factor of 1.71 mW/m-K2 at 373 K was obtained in TiS2:Sn0.05. In addition, the thermal conductivity was decreased with Sn addition and reached a minimum value of 2.11 W/m-K at 623 K in TiS2:Sn0.075, due to the impurity phase (misfit phase) and defects (excess Ti) scattering. The zT values increased from 0.08 in pristine TiS2 to an optimized value of 0.46 K at 623 K in TiS2:Sn0.05.

Enhancement in Thermoelectric Properties of TiS 2 by Sn Addition

Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range have direct bandgaps changing from 0.7 eV (InN) to 3.4 eV (GaN). With this feature, optoelectronic devices such as light emitting diodes, laser diodes and ultraviolet (visible rays–UV) photodetectors are made. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy, radio frequency sputtering method and metal organic chemical vapor deposition. Compared with these methods, the Thermionic Vacuum Arc, which is promising thin film growth technique, is relatively inexpensive and quite effective approach for preparing InGaN thin films. The purpose of this research is to investigate the physical properties of the film. The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure. The larger crystallite size and smaller FWHM indicate better crystallization. Microstrain values also exhibit good crystallite films respect to the low dislocation density. This film has a potential for photovoltaic devices based on the absorbance graph. It was observed that the compound is homogeneously dispersed on the surface and that there is a nanoporous structure.

/pdf/investigation-of-gan-ingan-thin-film-growth-on-ito-substrate-5f8pv1kezl.pdf

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method

Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering

Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method

Under various power ratios and temperatures, In x ga 1-x N films with different indium composition x were grown on Si(111) substrates by reactive magnetron sputtering, and then annealed at ammonia atmosphere around 700°C for 2 hours. The indium composition x can be adjusted by the growth temperature over the range of 600~800°C. There is no InN phase and In droplet formation in the In x ga 1-x N films due to the low-temperature advantages of reactive magnetron sputtering. The rich In composition in In x ga 1-x N films is caused by the higher sputtering yield of In 2 O 3 target than Ga 2 O 3 target. Raman scattering analysis revealed that the In x ga 1-x N films obtained at different temperatures were wurtzite structure, and the compositional inhomogeneity is caused by the relaxation of momentum conservation and increase of lattice disorder.

/pdf/structural-and-morphological-characteristics-of-inxga1-xn-z86d9mw054.pdf

Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering

Under various power ratios and temperatures, InxGa1-xN films with different indium composition x were grown on Si(111) substrates by reactive magnetron sputtering, and then annealed at ammonia atmosphere around 700�� for 2 hours. The indium composition x can be adjusted by the growth temperature over the range of 600~800�� . There is no InN phase and In droplet formation in the InXGa1-XN films due to the low-temperature advantages of reactive magnetron sputtering. The rich In composition in InXGa1-XN films is caused by the higher sputtering yield of In2O3 target than Ga2O3 target. Raman scattering analysis revealed that the InXGa1-XN films obtained at different temperatures were wurtzite structure, and the compositional inhomogeneity is caused by the relaxation of momentum conservation and increase of lattice disorder.

Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive

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Papers

Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method

Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering

Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive