Advances in the design and assembly of flexible thermoelectric device

Thermoelectric technology provides a promising solution to sustainable energy utilization and scalable power supply. Recently, Ag2Q‐based (Q = S, Se, Te) silver chalcogenides have come forth as potential thermoelectric materials that are endowed with complex crystal structures, high carrier mobility coupled with low lattice thermal conductivity, and even exceptional plasticity. This review presents the latest advances in this material family, from binary compounds to ternary and quaternary alloys, covering the understanding of multi‐scale structures and peculiar properties, the optimization of thermoelectric performance, and the rational design of new materials. The “composition‐phase structure‐thermoelectric/mechanical properties” correlation is emphasized. Flexible and hetero‐shaped thermoelectric prototypes based on Ag2Q materials are also demonstrated. Several key problems and challenges are put forward concerning further understanding and optimization of Ag2Q‐based thermoelectric chalcogenides.

Ag2Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Abstract Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi 2 Te 3 . This study highlights the potential of Ag 2 Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag 2 Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00 l )-orientation and in turn carrier mobility by reducing the (00 l ) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting in improved Seebeck coefficients and high power factors, and introduces Te Se point defects to effectively reduce the lattice thermal conductivity. A protective organic-polymer-based composite layer enhances film flexibility, and a rationally designed flexible thermoelectric device achieves an output power density of 1.5 mW cm −2 for wearable power generation under a 20 K temperature difference. 

Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Flexible gas sensors play an indispensable role in diverse applications spanning from environmental monitoring to portable medical electronics. Full wearable gas monitoring system requires the collaborative support of high‐performance sensors and miniaturized circuit module, whereas the realization of low power consumption and sustainable measurement is challenging. Here, a self‐powered and reusable all‐in‐one NO2 sensor is proposed by structurally and functionally coupling the sensor to the battery, with ultrahigh sensitivity (1.92%/ppb), linearity (R2 = 0.999), ultralow theoretical detection limit (0.1 ppb), and humidity immunity. This can be attributed to the regulation of the gas reaction route at the molecular level. The addition of amphiphilic zinc trifluoromethanesulfonate (Zn(OTf)2) enables the H2O‐poor inner Helmholtz layer to be constructed at the electrode–gel interface, thereby facilitating the direct charge transfer process of NO2 here. The device is then combined with a well‐designed miniaturized low‐power circuit module with signal conditioning, processing and wireless transmission functions, which can be used as wearable electronics to realize early and remote warning of gas leakage. This study demonstrates a promising way to design a self‐powered, sustainable, and flexible gas sensor with high performance and its corresponding wireless sensing system, providing new insight into the all‐in‐one system of gas detection.

A Self‐Powered, Rechargeable, and Wearable Hydrogel Patch for Wireless Gas Detection with Extraordinary Performance

The growing demand of thermal management on various fields such as miniaturized 5G chips have motivated researchers to develop new and high-performance solid state refrigeration technologies, typically including multicaloric and...

Solid-State Cooling: Thermoelectrics

Flexible thermoelectrics provide a different solution for developing portable and sustainable flexible power supplies. The discovery of silver sulfide–based ductile semiconductors has driven a shift in the potential for flexible thermoelectrics, but the lack of good p-type ductile thermoelectric materials has restricted the reality of fabricating conventional cross-plane π-shaped flexible devices. We report a series of high-performance p-type ductile thermoelectric materials based on the composition-performance phase diagram in AgCu(Se,S,Te) pseudoternary solid solutions, with high figure-of-merit values (0.45 at 300 kelvin and 0.68 at 340 kelvin) compared with other flexible thermoelectric materials. We further demonstrate thin and flexible π-shaped devices with a maximum normalized power density that reaches 30 μW cm−2 K−2. This output is promising for the use of flexible thermoelectrics in wearable electronics. Description A flexible power source Thermoelectric materials can harvest heat and turn it into power. Heat sources potentially include the heat generated by humans through wearable devices and might enable self-powering systems, but the lack of ductility for most thermoelectrics poses a major problem. Yang et al. found a thermoelectric silver/copper–based semiconductor that also is ductile (see the Perspective by Hou and Zhu). This material allows for a thin, flexible device capable of producing power, even when adhered to a wrist. —BG A flexible thermoelectric was developed from a silver/copper–based semiconductor that can be fashioned into a thin device.

Flexible thermoelectrics based on ductile semiconductors

Recently, a deformable and ductile inorganic semiconductor Ag2S has attracted intense attention due to its potential application in self-powered wearable and hetero-shaped electronics. However, the thermoelectric figure of merit (zT) of Ag2S is greatly limited by its extremely low carrier concentration. In this study, via doping I into Ag2S-based materials, we tune the carrier concentration into the optimal range as well as suppressing the lattice thermal conductivity. A maximum zT value of 0.26 is achieved for Ag2S0.7Se0.295I0.005 at 300 K, about three times higher than the matrix compound. More importantly, doping I has little effect on the ductility and deformability of Ag2S-based materials. Our study shows that I-doped Ag2S-based materials are good candidates for developing flexible thermoelectric technologies.

Enhanced thermoelectric performance in ductile Ag2S-based materials via doping iodine

Phase-modulated mechanical and thermoelectric properties of Ag2S1-xTex ductile semiconductors

A review on WO3 gasochromic film: Mechanism, preparation and properties

Multi-alloying effect of Ti, Mn, Cr, Zr, Er on the cast Al-Zn-Mg-Cu alloys

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