Lijun Zhang

TL;DR: In this paper, a measurement of the time-dependent CP-violating (CPV) asymmetries in B0-->K(0)(S)pi(0) decays based on 124x10(6) Upsilon(4S)->BB decays collected with the BABAR detector at the PEP-II asymmetric-energy B factory at SLAC is presented.

TL;DR: In this paper, a measurement of the time-dependent CP asymmetry for the neutral B-meson decay is presented, where the authors use a sample of approximately 114 million Bmeson pairs taken at the {Upsilon}(4S) resonance with the BABAR detector at SLAC.

TL;DR: In this paper, a mixed-cation tri-layered halide perovskite can be obtained by sandwiching a [CuX6] layer between Sb3+ perovsite bilayers along the polar [111] planes with cation ordering.

Abstract: Covalent‐polar semiconductors that show intrinsic 2D vertical polarization present new device opportunities. These materials differ from ordinary ferroelectrics in that they are able to maintain polarization normal to a surface even with an unscreened depolarization field. Identifying phases that exhibit intrinsic 2D vertical polarization is an ongoing challenge. Here the discovery of a new promising phase via computational material design, specifically 2D LiAlTe2, is reported. The design concept is developed from a physical understanding of 3D hyperferroelectric covalent polar semiconductors. A structure determination method combining a swarm intelligence algorithm and first‐principles calculations is used to identify energetically stable structures. In addition to the expected layered version of bulk LiAlTe2, β‐LiAlTe2, a novel 2D structure, γ‐LiAlTe2, is found. In this phase, the vertical dipole can be switched between 0.07 and −0.11 e Å. This switching is triggered by the movement of the Li atom between two local energy minima. The associated asymmetric double‐well energy profile can be continuously tuned by the applied electric field as well as strain. There is, therefore, a reversible transition between two polar states. This discovered off‐plane switchability provides an opportunity for a 2D γ‐LiAlTe2‐ based interfacial phase change memory device; for example, by growing γ‐LiAlTe2/GeTe heterostructures.