Halide Perovskite, a Potential Scintillator for X-Ray Detection

Organic–inorganic hybrid perovskite solar cells (PSCs) have made unprecedented progress in the past ten years, the power conversion efficiency of which increased from 3.8% in 2009 to 25.5% in 2020. The choice of hole transport layers (HTLs) is a key factor for achieving efficient and stable PSCs. Recently, 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-OMeTAD) has been proven to be the most suitable small molecule HTL material in n–i–p PSCs. However, the conductivity and hole mobility of spiro-OMeTAD are dependent on the dopants. Bis(trifluoromethane)sulfonamide lithium salt (LiTFSI) and 4-tert-butylpyridine (TBP) have become the standard HTL dopants to improve the charge transport properties of n–i–p PSCs. Both of these two dopants are effective but have a negative impact on the device stability (induced by ion migration, hygroscopicity, and corrosiveness). In response, lots of efforts have been devoted to the development of alternative and new dopants. In this review, the influence of different doping strategies and corresponding doping mechanisms on device performance and stability was mainly discussed. The stability issues of doped spiro-OMeTAD based PSCs were also described. Finally, we proposed some possible future research goals for dopants based on these existing results to obtain long-lasting and high-efficiency PSCs.

Strategies of modifying spiro-OMeTAD materials for perovskite solar cells: a review

Compared with thin-film morphology, 1D perovskite structures such as micro/nanowires with fewer grain boundaries and lower defect density are very suitable for high-performance photodetectors with higher stability. Although the stability of perovskite microwire-based photodetectors has been substantially enhanced in comparison with that of photodetectors based on thin-film morphology, practical applications require further improvements to the stability before implementation. In this study, a template-assisted method is developed to prepare methylammonium lead bromide (MAPbBr3 ) micro/nanowire structures, which are encapsulated in situ by a protective hydrophobic molecular layer. The combination of the protective layer, high crystalline quality, and highly ordered microstructures significantly improve the stability of the MAPbBr3 single-crystal microwire arrays. Consequently, these MAPbBr3 single-crystal microwire-array-based photodetectors exhibit significant long-term stability, maintaining 96% of the initial photocurrent after 1 year without further encapsulation. The lifetime of such photodetectors is hence approximately four times longer than that of the most stable previously reported perovskite micro/nanowire-based photodetector; this is thought to be the most stable perovskite photodetector reported thus far. Furthermore, this work should contribute further toward the realization of perovskite 1D structures with long-term stability.

Perovskite Single-Crystal Microwire-Array Photodetectors with Performance Stability beyond 1 Year.

Although lead-based perovskite solar cells (PSCs) are highly efficient, the toxicity of lead (Pb) limits its large-scale commercialization. As such, there is an urgent need to find alternatives. Many studies have examined tin-based PSCs. However, pure tin-based perovskites are easily oxidized in the air or just in glovebox with an ultrasmall amount of oxygen. Such a characteristic makes their performance and stability less ideal compared with those of lead-based perovskites. Herein, how to address the instability of tin-based perovskites is introduced in detail. First, the crystalline structure, optical properties, and sources of instability of tin-based perovskites are summarized. Next, the preparation methods of tin-based perovskite are discussed. Then, various measures for solving the instability problem are explained using four strategies: additive engineering, deoxidizer, partial substitution, and reduced dimensions. Finally, the challenges and prospects are laid out to help researchers develop highly efficient and stable tin-based perovskites in the future.

https://onlinelibrary.wiley.com/doi/epdf/10.1002/advs.201903540

Strategies for Improving the Stability of Tin-Based Perovskite (ASnX3) Solar Cells.

Advances in the Application of Perovskite Materials

A high-performance and broadband heterojunction photodetector has been successfully fabricated. The heterostructure device is based on a uniform and pinhole-free perovskite film constructed on top of a single-crystal germanium layer. The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device. The photon response properties are characterized in detail from the visible to near-infrared spectrum. At an optical fibre communication wavelength of 1550 nm, the heterojunction device exhibits the highest responsivity of 1.4 A/W. The performance is promoted because of an antireflection perovskite coating, the thickness of which is optimized to 150 nm at the telecommunication band. At a visible light wavelength of 680 nm, the device shows outstanding responsivity and detectivity of 228 A/W and 1.6 × 1010 Jones, respectively. These excellent properties arise from the photoconductive gain boost in the heterostructure device. The presented heterojunction photodetector provides a competitive approach for wide-spectrum photodetection from visible to optical communication areas. Based on the distinguished capacity of light detection and harvesting from the visible to near-infrared spectrum, the designed germanium/perovskite heterostructure configuration is believed to provide new building blocks for novel optoelectronic devices. A device made from germanium and perovskite layers can detect light in the visible and near-infrared ranges, showing potential for use in a wide range of applications, including in optical communications and next-generation optoelectronics. This heterojunction photodetector fabricated by Chunlai Xue of the Chinese Academy of Sciences and colleagues overcomes problems in single-material photodetectors, which are unable to detect a broad range of light. Recent research into various combinations of semiconducting materials for heterojunction photodetectors has led to devices with poor sensitivity to light or that require a high working voltage. Adding a layer of methylammonium lead triiodide perovskite to a layer of germanium resulted in a highly sensitive photodetector at the optical fibre communication wavelength of 1550 nm (near-infrared range) and the visible light wavelength of 680 nm.

/pdf/germanium-perovskite-heterostructure-for-high-performance-3c0oiohgtg.pdf

Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band

Hybrid organic–inorganic perovskites have been widely studied in high-performance optoelectronic devices. Long-term stability is a key limitation to date in restricting their further development and commercial application. In general, interface properties between a semiconductor and an electrode highly affect device performance and stability. Herein, contact characteristics between the perovskite and electrode varying with illumination status have been first investigated. The results suggest that device's contact resistance ( RC), obtained from a transfer length method, decreases as the incident light intensity increases. The RC under a higher irradiation intensity (1.26 mW/cm2) is about one-tenth of that at a lower density (0.08 mW/cm2). Simulation has been performed and shows a similar trend with experimental results. The interface physical model has been discussed based on an energy band theory. The band bending and barrier modulation at the interface under light illumination are originated from the surface states and the localized charges. This work explains the interface in determining device's fundamental properties, including stability, RC variation, and charge carrier transport process. It is significant in understanding the device working mechanism and providing a potential way for perovskite optoelectronic devices with enhanced stability and performance.

Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film

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Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band

Contact property depending on radiation intensity between the perovskite semiconductor layer and electrode film