In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line equivalent circuit models were used for the cases of an air-filled line and a lossless line, whose distributed elements can be calculated from full wave finite element simulations. With these calculated distributed elements and microstrip line measurements, the complex permittivity was extracted. The technique utilizes a simple way to separate the dielectric loss from the measured total loss and the complex permittivity was extracted using the measured propagation constant. A rational dielectric model was employed to fit the extracted complex permittivity, which ensures causality of the final solution. The best fitting results obtained through this procedure are considered as the final permittivity results, which have shown excellent match to the data sheet values. Moreover, simulations using the fitted permittivity exhibit good agreement with the experimental propagation constant data of microstrip lines up to 60 GHz. The proposed method was demonstrated on polyimide, and it can be applied to other thin film materials.

A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz

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Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz