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Electronic Transport In Mesoscopic Systems

Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics. A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound1,2. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V−1 s−1 and 104 cm2 V−1 s−1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides5,6,7 and black phosphorus8,9,10,11.

/pdf/high-electron-mobility-quantum-hall-effect-and-anomalous-12k94rof2n.pdf

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds and are typically limited to materials with strict structure matching and processing compatibility. Van der Waals integration, in which pre-fabricated building blocks are physically assembled together through weak van der Waals interactions, offers an alternative bond-free integration strategy without lattice and processing limitations, as exemplified by two-dimensional van der Waals heterostructures. Here we review the development, challenges and opportunities of this emerging approach, generalizing it for flexible integration of diverse material systems beyond two dimensions, and discuss its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials.

/pdf/van-der-waals-integration-before-and-beyond-two-dimensional-4tjp856qvb.pdf

Van der Waals integration before and beyond two-dimensional materials

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

/pdf/recent-progress-in-2d-group-va-semiconductors-from-theory-to-340ay01tfh.pdf

Recent progress in 2D group-VA semiconductors: from theory to experiment

The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensionals, in the nanoscience and nanotechnology community. In this Perspective, we critically analyze the reasons behind the surge of experimental and theoretical works on this novel two-dimensional material. We believe that the fact that black phosphorus band gap value spans over a wide range of the electromagnetic spectrum (interesting for thermal imaging, thermoelectrics, fiber optics communication, photovoltaics, etc.) that was not covered by any other two-dimensional material isolated to date, its high carrier mobility, its ambipolar field-effect, and its rather unusual in-plane anisotropy drew the attention of the scientific community toward this two-dimensional material. Here, we also review the current advances, the future directions and the challenges in this young research...

Black Phosphorus: Narrow Gap, Wide Applications

The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

Quantum Hall effect in black phosphorus two-dimensional electron system

http://absimage.aps.org/image/MAR16/MWS_MAR16-2015-003873.pdf

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron System

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Quantum Hall effect in black phosphorus two-dimensional electron system

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron System