12 Papers
70 Citations
Li Yu is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Standard cell & Statistical model. The author has an hindex of 5, co-authored 11 publications. Previous affiliations of Li Yu include Tsinghua University.
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Papers
Methodology for analysis of TSV stress induced transistor variation and circuit performance
Li Yu,Wen-Yao Chang,Kewei Zuo,Jean Wang,Douglas Yu,Duane S. Boning +5 more
- 19 Mar 2012
TL;DR: This work proposes a complete flow to characterize the influence of TSV stress on transistor and circuit performance, and proposes an efficient algorithm to calculate circuit variation corresponding to TSVs stress based on a grid partition approach.
Remembrance of Transistors Past: Compact Model Parameter Extraction Using Bayesian Inference and Incomplete New Measurements
Li Yu,Sharad Saxena,Christopher Hess,Abe Elfadel,Dimitri A. Antoniadis,Duane S. Boning +5 more
- 01 Jun 2014
TL;DR: The distinguishing feature of the proposed method is that it enables the extraction of an entire set of MOSFET model parameters using limited and incomplete IV measurements from on-chip monitor circuits.
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Statistical library characterization using belief propagation across multiple technology nodes
Li Yu,Sharad Saxena,Christopher Hess,Ibrahim M. Elfadel,Dimitri A. Antoniadis,Duane S. Boning +5 more
- 09 Mar 2015
TL;DR: A novel flow to enable computationally efficient statistical characterization of delay and slew in standard cell libraries using a limited combination of output capacitance, input slew rate and supply voltage for the extraction of statistical timing metrics of an individual logic gate.
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Statistical Modeling with the Virtual Source MOSFET Model
Li Yu,Lan Wei,Ibrahim M. Elfadel,Dimitri A. Antoniadis,Duane S. Boning +4 more
- 01 Mar 2013
TL;DR: A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time and shows that the statistical VS model accurately captures non-Gaussian features that are important for low-power designs.
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An improved silicon-oxidation-kinetics and accurate analytic model of oxidation
Wang Ji-min,Li Yu,Li Ruiwei +2 more
TL;DR: In this article, the authors improved the silicon-oxidation-kinetics of Deal-Grove and developed an accurate analytic model of oxidation, which is made of items, linear, parabola and logarithm, of which the factors are a, b, c and characteristic width d.
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