Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Plasma-resistant ceramics with controlled electrical resistivity

An article comprises a plasma resistant ceramic material comprising 40 mol % to less than 100 mol % of Y2O3, above 0 mol % to 60 mol % of ZrO2, and above 0 mol % to 5 mol % of Al2O3

Rare-earth oxide based monolithic chamber material

A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phases to three phases. In a first embodiment, the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole % and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %, , wherein a mean grain size of said ceramic ranges from about 2 µm to about 8 µm. In a third embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

PROBLEM TO BE SOLVED: To provide a specific ceramic material having corrosion/erosion resistance in semiconductor processing conditions using a corrosive/erosive plasma. SOLUTION: The corrosive plasma may be a halogen-containing plasma. The specific ceramic material reduces the capability of plasma arc discharge by providing a controlled electric resistivity through the modification of the specific ceramic material. COPYRIGHT: (C)2009,JPO&INPIT

Plasma-proof ceramics equipped with controlled electric resistivity

PROBLEM TO BE SOLVED: To provide a structure which generates a uniform electric discharge in a discharge direction and is improved in discharge efficiency. SOLUTION: Discharge electrode units 9 and 10 are provided with electrodes 2 and 3 and solid dielectrics which cover the electrodes 2 and 3. The discharge side surface of the solid dielectric is made of alumina and an oxide containing a rare earth element (RE), and includes, by mass%, 68-94% Al in terms of Al 2 O 3 and 6-32% rare earth element (RE) in terms of RE 2 O 3 . A discharge electrode assembly 100 is made of two discharge electrode units and these discharge electrode units are arranged so as to oppose to each other. A discharge treatment apparatus is structured so as to generate plasma by using the discharge electrode assembly. The discharge efficiency is thereby improved, and corrosion resistance to plasma of the discharge side surface of the discharge electrode unit is also improved. COPYRIGHT: (C)2010,JPO&INPIT

Discharge electrode unit, discharge electrode assembly and discharge treatment apparatus

PROBLEM TO BE SOLVED: To provide a ceramic article resistant to erosion by a halogen-containing plasma used in semiconductor processing. SOLUTION: The ceramic article includes ceramic which is multi-phased, typically including at least two phases or three phases. In a first embodiment, the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mol% to about 75 mol%; zirconium oxide at a molar concentration ranging from about 10 mol% to about 30 mol%; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mol% to about 30 mol%. COPYRIGHT: (C)2009,JPO&INPIT

Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasma

Provided is a ceramic product that is resistance to erosion by halogen-containing plasma used in a semiconductor process. A ceramic product, in general, contains multi-phase ceramic containing two phases or three phases. Ceramic according to a first embodiment is formed of yttrium oxide within a mole concentration range of approximately 50 mole% to approximately 75 mole%; zirconium oxide within a mole concentration range of approximately 10 mole% to approximately 30 mole%; and at least one other component having a mole concentration range of approximately 10 mole% to approximately 30 mole% selected from a group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and a mixture thereof. A ceramic product according to a second embodiment contains ceramic formed of yttrium oxide within a mole concentration range of approximately 90 mole% to approximately 70 mole%; and zirconium oxide within a mole concentration range of approximately 10 mole% to approximately 30 mole%, in which the average grain size range of the ceramic is approximately 2 micrometers to approximately 8 micrometers. The ceramic product according to a third embodiment contains ceramic formed of zirconium oxide within a mole concentration range of approximately 96 mole% to approximately 94 mole%; and yttrium oxide within a mole concentration range of approximately 4 mole% to approximately 6 mole%.

A sintered solid solution coating which reduces the erosion rate of surfaces exposed to halogen plasma while exhibiting improved mechanical properties

To provide a ceramic article having durability against erosion by a halogen-containing plasma to be used for semiconductor processing.SOLUTION: A method for producing an article having a coating durable against erosion by a halogen-containing plasma is provided, which uses technology selected from the group consisting of thermal spray, plasma spray, sputtering, chemical vapor phase deposition, and calcination. A ceramic coating is provided, which contains yttrium oxide at a concentration ranging from 80 mol% to 55 mol% and zirconium oxide at a concentration ranging from 20 mol% to 45 mol%. A method for producing a bulk ceramic article having durability against a halogen-containing plasma is provided, in which a bulk ceramic article is formed by sintering a green body, and by the sintering, a solid solution ceramic is formed. The solid solution ceramic contains yttrium oxide at a concentration ranging from 55 mol% to 80 mol% and zirconium oxide at a concentration ranging from 20 mol% to 45 mol%.SELECTED DRAWING: Figure 1A

Method and apparatus for reducing erosion rate of surface exposed to halogen-containing plasma

PROBLEM TO BE SOLVED: To provide a ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing.SOLUTION: The ceramic article includes ceramic which is multi-phased, typically including at least two phase to three phases. In a first embodiment, the ceramic article can be obtained by ceramic-coating a surface of a body with material through well-known art such as plasma spraying. The material is formed from: yttrium oxide at a molar concentration ranging from about 50 mole% to about 75 mole%; zirconium oxide at a molar concentration ranging from about 10 mole% to about 30 mole%; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole% to about 30 mole%.

Method and apparatus which reduce erosion rate of surface exposed to halogen-containing plasmas

Apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

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