As the black cesium lead iodide (CsPbI3) tends to transit into a yellow δ-phase at ambient, it is imperative to develop a stabilized black phase for photovoltaic applications. Herein, we report a distorted black CsPbI3 film by exploiting the synergistic effect of hydroiodic acid (HI) and phenylethylammonium iodide (PEAI) additives. It is found that the HI induces formation of hydrogen lead iodide (HPbI3+x), an intermediate to the distorted black phase with appropriate band gap of 1.69 eV; while PEAI provides nucleation for optimized crystallization. More importantly, it stabilizes the distorted black phase by hindering phase transition via its steric effects. Upon optimization, we have attained solar cell efficiency as high as 15.07%. Specifically, the bare cell without any encapsulation shows negligible efficiency loss after 300 h of light soaking. The device keeps 92% of its initial cell efficiency after being stored for 2 months under ambient conditions.

/pdf/all-inorganic-cesium-lead-iodide-perovskite-solar-cells-with-21xl1a2v6s.pdf

All-inorganic cesium lead iodide perovskite solar cells with stabilized efficiency beyond 15

Hybrid lead halide perovskites exhibit carrier properties that resemble those of pristine nonpolar semiconductors despite static and dynamic disorder, but how carriers are protected from efficient scattering with charged defects and optical phonons is unknown. Here, we reveal the carrier protection mechanism by comparing three single-crystal lead bromide perovskites: CH3NH3PbBr3, CH(NH2)2PbBr3, and CsPbBr3. We observed hot fluorescence emission from energetic carriers with ~102-picosecond lifetimes in CH3NH3PbBr3 or CH(NH2)2PbBr3, but not in CsPbBr3. The hot fluorescence is correlated with liquid-like molecular reorientational motions, suggesting that dynamic screening protects energetic carriers via solvation or large polaron formation on time scales competitive with that of ultrafast cooling. Similar protections likely exist for band-edge carriers. The long-lived energetic carriers may enable hot-carrier solar cells with efficiencies exceeding the Shockley-Queisser limit.

/pdf/screening-in-crystalline-liquids-protects-energetic-carriers-22hms0f4qr.pdf

Screening in crystalline liquids protects energetic carriers in hybrid perovskites

In this work, a SnO2 /ZnO bilayered electron transporting layer (ETL) aimed to achieve low energy loss and large open-circuit voltage (Voc ) for high-efficiency all-inorganic CsPbI2 Br perovskite solar cells (PVSCs) is introduced. The high-quality CsPbI2 Br film with regular crystal grains and full coverage can be realized on the SnO2 /ZnO surface. The higher-lying conduction band minimum of ZnO facilitates desirable cascade energy level alignment between the perovskite and SnO2 /ZnO bilayered ETL with superior electron extraction capability, resulting in a suppressed interfacial trap-assisted recombination with lower charge recombination rate and greater charge extraction efficiency. The as-optimized all-inorganic PVSC delivers a high Voc of 1.23 V and power conversion efficiency (PCE) of 14.6%, which is one of the best efficiencies reported for the Cs-based all-inorganic PVSCs to date. More importantly, decent thermal stability with only 20% PCE loss is demonstrated for the SnO2 /ZnO-based CsPbI2 Br PVSCs after being heated at 85 °C for 300 h. These findings provide important interface design insights that will be crucial to further improve the efficiency of all-inorganic PVSCs in the future.

Interface Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with Efficiency over 14%

A synergic interface design is demonstrated for photostable inorganic mixed-halide perovskite solar cells (PVSCs) by applying an amino-functionalized polymer (PN4N) as cathode interlayer and a dopant-free hole-transporting polymer poly[5,5'-bis(2-butyloctyl)-(2,2'-bithiophene)-4,4'-dicarboxylate-alt-5,5'-2,2'-bithiophene] (PDCBT) as anode interlayer. First, the interfacial dipole formed at the cathode interface reduces the workfunction of SnO2 , while PDCBT with deeper-lying highest occupied molecular orbital (HOMO) level provides a better energy-level matching at the anode, leading to a significant enhancement in open-circuit voltage (Voc ) of the PVSCs. Second, the PN4N layer can also tune the surface wetting property to promote the growth of high-quality all-inorganic perovskite films with larger grain size and higher crystallinity. Most importantly, both theoretical and experimental results reveal that PN4N and PDCBT can interact strongly with the perovskite crystal, which effectively passivates the electronic surface trap states and suppresses the photoinduced halide segregation of CsPbI2 Br films. Therefore, the optimized CsPbI2 Br PVSCs exhibit reduced interfacial recombination with efficiency over 16%, which is one of the highest efficiencies reported for all-inorganic PVSCs. A high photostability with a less than 10% efficiency drop is demonstrated for the CsPbI2 Br PVSCs with dual interfacial modifications under continuous 1 sun equivalent illumination for 400 h.

Dual Interfacial Design for Efficient CsPbI 2 Br Perovskite Solar Cells with Improved Photostability.

Inorganic Halide Perovskite Solar Cells: Progress and Challenges

Inorganic Perovskite Solar Cells: A Rapidly Growing Field

The invention provides an anodic oxidation electrolyte, an anodic oxidation method and an aluminum or aluminum alloy comprising an anodic oxide film. The anodic oxidation electrolyte comprises 40-60 g/L of sulfuric acid, 8-20 g/L of organic weak acid and 5-30 ml/L of film formation accelerator. In the electrolyte, water serves as a solvent. An aluminum or aluminum alloy base material is subjectedto anodic oxidation through the electrolyte, and fatigue damage to the aluminum or aluminum alloy base material is small. The anodic oxidation electrolyte has the good corrosion resistance. The anodicoxidation method is an environment-friendly method capable of replacing chromic acid anodic oxidation.

Anodic oxidation electrolyte, anodic oxidation method and aluminum or aluminum alloy comprising anodic oxide film

The invention discloses a stain-resistant high-temperature liquid asphalt coating and a preparation method thereof, belonging to the technical field of stain-resistant coatings. The preparation methodcomprises the following steps: firstly, mixing a solvent, polyphenylene sulfide, a structural blending agent and an additive in proportion to prepare slurry; mixing the slurry with a hydrophobic modifier to prepare a coating; and coating the surface of a pre-treated substrate with the coating, and heating and preserving the temperature for a period of time and cooling to room temperature to obtain the stain-resistant high-temperature liquid asphalt coating. The stain-resistant high-temperature liquid asphalt coating provided by the invention meets the using demand in a high-temperature liquidasphalt environment; the coating and the substrate material form a good interlaminar bonding force, a hydrophobic surface is formed on the surface of the coating, the stain-resistant performance of the compound coating is improved, and the stain area of the high-temperature liquid asphalt is smaller than 10%.

Stain-resistant high-temperature liquid asphalt coating and preparation method thereof

The invention discloses an organic-inorganic hybrid nanocapsule and a preparation method thereof, and belongs to the technical field of nanometer materials. The preparation method comprises the following steps of mixing deionized water and a nanoparticle dispersion liquid, so as to prepare a dispersion liquid A; stirring and mixing an organic polymer wall material, a restoration agent and an organic solvent, so as to prepare a dispersion liquid B; mixing the dispersion liquid A and the dispersion liquid B, and shearing dispersing at high speed, so as to obtain a dispersion liquid C; adding a reaction agent into the dispersion liquid C, so as to obtain a capsule dispersion liquid D; cleaning the capsule dispersion liquid D by ultrasonic waves, so as to obtain the organic-inorganic hybrid nanocapsule. The preparation method has the advantages that organic groups are grafted onto the inorganic nanoparticle with high surface area to form the reaction type hybrid material; the reaction typehybrid material is applied into the wall material of the small-particle size microcapsule, so that the collapsing of the capsule wall is prevented, and the mechanical stability and thermal stabilityof the capsule wall are improved; the organic-inorganic hybrid nanocapsule with nanometer particle size, high strength and good thermal stability can be obtained.

Organic-inorganic hybrid nanocapsule and preparation method thereof

The invention discloses a nickel plating layer stress regulator and application thereof and belongs to the field of metal electrodeposition. The nickel plating layer stress regulator comprises an additive and a regulator; the additive is mixture of one or above of gluconic acid, phytic acid and citric acid; and the regulator is ammonia water. The nickel plating layer stress regulator is applied toelectroplating method nickel plating technology and forms a nickel plating solution with a nickel salt solution; the nickel salt solution is one or above of a nickel sulfate solution, a nickel chloride solution and a nickel aminosulfonate solution, the concentration of nickel sulfate is 150-300g/L, the concentration of nickel chloride is smaller than or equal to 60g/L, and the concentration of nickel aminosulfonate is smaller than or equal to 450g/L; as for the regulator, the concentration of gluconic acid is 10-100g/L, the concentration of phytic acid is 1-10g/L, and the concentration of citric acid is smaller than or equal to 30g/L; and a pH value of the nickel plating solution after being regulated with the ammonia water is 3-6. When plating is applied, an anode is Ni, a cathode is redcopper, the temperature of the nickel plating solution is 30-60 DEG C, the current density is 1-3A/dm , and the plating time is 10-60min. For the nickel plating layer, the average grain size is 10-50nm, and the macro-internal stress is 20-250Mpa. The nickel plating layer stress regulator provided by the invention improves the interface bonding of laminate plating layers and can be applied to aCu-Ni-Au multilayer plating layer on the surface of a space station electric transmission device.

Nickel plating layer stress regulator and application thereof

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