/pdf/a-review-on-the-artificial-neural-network-applications-for-2rqxbxziah.pdf

A review on the artificial neural network applications for small‐signal modeling of microwave FETs

The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an evergreen and ever flourishing research field that has to be up-to-date with technological developments. Hence, modeling techniques must be continuously adapted and extended to suit best evolving technologies. The extraction of a FET high-frequency small-signal equivalent circuit is a very active and broad research area of significant interest, owing to its use as a prerequisite for noise and large-signal modeling. The aim of this invited article is to provide in-depth knowledge, critical understanding, and new insights into how to extract a FET small-signal equivalent circuit from both theoretical and practical perspectives. To illustrate potential solutions to the key challenges faced by researchers, experimental results for different semiconductor technologies are reported and discussed. The study is focused on the hot research topic of the cold approach that has been, and still is, the most widely used technique for extracting FET small-signal models and on the active role of the transconductance for successful modeling. © 2016 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2016.

The large world of FET small-signal equivalent circuits (invited paper)

This article presents an accurate and efficient extraction procedure for microwave frequency small-signal equivalent circuit parameters of AlInN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer-aided modeling approach. The S-, Y-, and Z- parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y- and Z- parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch-off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de-embedding the extrinsic parameters. S-parameter simulation of the developed small-signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small-signal parameters to minimize the error between developed SSEC model and device simulation based s-parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.

Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

In this paper is developed a transparent antenna, bioinspired in ingae edulis mart plants, build in Indio Tin Oxide film, and flexible transparent dielectric of low cost (cellulose acetate), generated by Gielis formula, for wireless local area network application in 5 GHz (5.15–5.85 GHz). The measured bioinspired transparent antenna presented bandwidth of 4.11 GHz (4.50-8.66 GHz), covering the WLAN band, with maximum gain of 5.44 dBi, and half power beamwidth of 126° at resonance frequency.

Bioinspired transparent antenna for WLAN application in 5 GHz

The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.

Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design

An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system agilent commercial circuit simulator is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 µm2 gate width HEMT up to 40 GHz. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:464-469, 2014.

An improved millimeter-wave small-signal modeling approach for HEMTs

This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor f T /f MAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm2, and without pads, the PA occupies 0.141 mm2.

A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

Summary

An improved linear modeling technique for gallium nitride high electron mobility transistor small-signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small-signal model. The analytical expressions for the relative sensitivities with respect to deviations in the measured scattering (S) parameters are also given here. The derived relationships have universal validity, but they have been verified by the good agreement between the measured S-parameters and simulated ones over the frequency range up to 40 GHz. Copyright © 2016 John Wiley & Sons, Ltd.

An improved linear modeling technique with sensitivity analysis for GaN HEMT

A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2487–2491, 2015

A 60 GHz transformer‐coupled neutralized low power CMOS power amplifier

A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinch-off cold FETs. The main advantage of this approach is that parasitic capacitance Cpg, Cpd, and Cpdg can be extracted under different pinch-off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width). © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:3005–3007, 2013

A New Method to Determine Parasitic Capacitances for HEMTs

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