With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN contacts with low resistivity, good thermal stability, and high reflectivity has become more urgent. In this paper, a novel method of surface treatment on p-GaN to form good ohmic contacts between p-GaN and Ag was proposed. We proposed a novel structure with Ag/ultrathin-ITO/p-GaN contact which shows a low contact resistivity as well as a high reflectance attributed to some isolated islands of ITO and the absence of Ni layer. The calculated ρ c of the new structure which is lower than 7×10−2W/cm2 based on the CTLM method showed that the Ag/ultrathin-ITO/p-GaN contact has a lower contact resistivity compared to the contact without the ultrathin ITO layer of which the ρ c is higher than 2 W/cm2 The Ag film cannot be ripped off by the tape which shows a good adhesion. The LEDs fabricated with this contacts showed a 30% higher luminance at 20mA forward currents as compared to the conventional LEDs.

A novel surface treatment for the sliver ohmic contacts to P-GaN

研究了Ag的厚度、退火时间、沉积温度对于Ni/Ag/Ti/Au电极的反射率及与p-GaN欧姆接触性能的影响. 利用分光光度计测量反射率, 采用圆形传输线模型计算比接触电阻率. 结果表明: 随着Ag厚度的增加, Ni/Ag/Ti/Au电极的反射率逐渐增大; 在氧气氛围中, 随着退火时间从1 min增至10 min, 300 ℃退火时, 比接触电阻率持续下降, 而对于400-600 ℃退火, 比接触电阻率先减小后增大; 在300和400 ℃氧气中进行1-10 min 的退火后, Ni/Ag/Ti/Au的反射率变化较小, 退火温度高于400 ℃时, 随着退火时间的增加, 反射率急剧下降; 在400 ℃氧气中3 min退火后, 比接触电阻率可以达到3.6×10-3 Ω·cm2. 此外, 适当提高沉积温度可以增加Ni/Ag/Ti/Au的反射率并降低比接触电阻率, 沉积温度为120 ℃条件下的Ni/Ag/Ti/Au电极在450 nm处反射率达到90.1%, 比接触电阻率为6.4×10-3 Ω·cm2. 综合考虑电学和光学性能, 在沉积温度为120 ℃下蒸镀Ni/Ag/Ti/Au (1/200/100/100 nm)并在400 ℃氧气中进行3 min退火可以得到较优化的电极. 利用此电极制作的垂直结构发光二极管在350 mA电流下的工作电压为2.95 V, 输出光功率为387.1 mW, 电光转换效率达到37.5%.

低接触电阻率Ni/Ag/Ti/Au反射镜电极的研究

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低接触电阻率Ni/Ag/Ti/Au反射镜电极的研究