A circular slit-groove surface plasmon polaritons (SPPs) launcher surrounding a photodetector is employed theoretically to enhance the photocurrent of atypical Si-Ge photodetectors. The slit and grooves are designed such that the SPPs are focused at the center of the absorption layer of the photodetector to result in additional electric current. Fabry–Perot resonance condition accurately calculates the period of the groove, slit-groove distance, photodetector radius, and slit-photodetector distance. The manipulation leads to constructive interference between the incident light impinging from the top and the SPPs propagating toward the photodetector. Simulation result shows that photocurrent increases by approximately 13-fold when the SPPs are introduced.

Photocurrent Enhancement in Si-Ge Photodetectors by Utilizing Surface Plasmons

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices.

https://iopscience.iop.org/article/10.1088/1674-4926/37/12/124002/pdf

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor*

A circular slit-groove surface plasmon polaritons (SPPs) launcher surrounding a photodetector is employed theoretically
to enhance the photocurrent of a typical Si-Ge photodetectors operating at telecommunication frequency regime. The slit
and grooves are designed such that the SPPs are focused at the center of the absorption layer of the photodetector to
result in additional electric current. Phase difference approach is applied to lead constructive interference between the
incident light impinging from the top and the SPPs propagating toward the photodetector. Simulation result proves the
interference and periodic behavior is observed. Finally the period of the groove, slit-groove distance, and slitphotodetector
distance is determined via simulation. Furthermore it was shown that photocurrent increases by
approximately 13-fold when the SPPs are introduced.

Photocurrent enhancement by utilizing unidirectional excitation of surface plasmons

Coherent anti-Stokes Raman scattering spectroscopy(CARS) is a well-known detecting tool in biosensing and nonlinear spectroscopy. It can provide a non-invasive alternative without the need for exogenous labels, while the enhancement factor for surface plasmon resonances(SPR) are extensively used to increase the local field close to the oscillators and which can obtain high enhancement. In this work, we investigate the enhancement factor of our structure for surface-enhanced coherent anti-Stokes Raman scattering. The absorption spectrum of the structure has been studied, a wide range of absorption has been realized. The enhancement can be as high as 10 16 over standard CARS. Our design is very useful for improving the enhancement factor of surface-enhanced coherent anti-Stokes Raman scattering.

https://iopscience.iop.org/article/10.1088/1674-4926/38/2/022001/pdf

High enhancement factor of Au nano triangular prism structure for surface enhanced coherent anti-Stokes Raman scattering

Emission of the LED can be enhanced by Surface Plasmons Resonance (SPRs), which are electron oscillations that can exist at the interface between a metal and dielectric materials. The mechanism is reliant upon the energy coupling effect between the emitted photons from the semiconductor and arranged metallic nanoparticles. The focus of this theoretical investigation is study the interaction between light and the metallic film, explicitly Ag and Au, deposited onto the surface of a light emitting diode (LED), which is proposed to allow coupling between surface plasmons and free-space photons. Moreover, it’s also demonstrated how the optical emission from a typical light of LED device can be spatially controlled through the deposition of a periodically structured metallic film. This theoretical investigation indicated that high-efficiency and spatially controlled direction light emission can be predicted for light emitters. This can be done through the best selection of the proposed parameters (λ=547.6nm and ʌ=660nm) and area of overlapping the circles of wave vectors for light in free space and surface plasmons. It is also appeared that the coupling between the free photons and surface plasmons is optimumfor the proposed wavelengths

Enhancement of emission and directionality of Light Emitting Diode using Surface Plasmon Resonance

The transmitting light in GaN-based LED with 30 nm thickness metal film grating is investigated. We proposed a basic grating structure model to enhance light intensity in GaN material, which was simpler and cheaper. We calculated and analyzed the structure with different parameters, and studied the numerical simulation results of Ag-films/Al-films/Au-films. With a simple Al or Ag basic grating structure, the 7.4–7.6 times intensity of 550 nm light can be obtained easily, and the enhancement efficiency is better than others.

https://iopscience.iop.org/article/10.1088/1674-4926/35/4/043003/pdf

Surface-plasmon-enhanced light transmission intensity with a basic grating in GaN-based LED

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Surface-plasmon-enhanced light transmission intensity with a basic grating in GaN-based LED