This article focuses on n-type doped transparent conducting binary oxides – namely, those with the general formula MxOy:D, where MxOy is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and experimental observation is explored, and an extensive comparison is made between the electrical properties of a number of the most interesting experimentally-prepared materials. In writing this article, we aim to provide both an accessible tutorial of the physical descriptions of transparent conducting oxides, and an up-to-date overview of the field, with a brief history, some key accomplishments from the past few decades, the current state of the field as well as postulation on some likely future developments.

/pdf/n-type-doped-transparent-conducting-binary-oxides-an-1sftw3pood.pdf

n-Type doped transparent conducting binary oxides: an overview

In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality...

Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review

ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.

/pdf/zno-based-transparent-conductive-thin-films-doping-2in2jtisde.pdf

ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

Al-Intercalated MnO2 cathode with reversible phase transition for aqueous Zn-Ion batteries

Nanolaminates are of great interest for their unique properties such as high dielectric constants and advanced mechanical, electrical, and optical properties. Here we report on the tuning of optical and structural properties of Al2O3/ZnO nanolaminates designed by atomic layer deposition (ALD). Structural properties of nanolaminates were studied by SEM, GIXRD, and AFM. Optical characterization was performed by transmittance and photoluminescence (PL) spectroscopy. Complex study of monolayer properties was performed by ellipsometry. Optical constants for Al2O3 and ZnO monolayer were calculated. The band gap of ZnO single layers and the excitonic PL peak position were shifted to the UV region related to quantum confinement effects. No peaks in the UV region were observed in nanolaminates with 2 nm ZnO single layer thickness due to fully depleted region in small crystalline grains (<2 nm). The improved room temperature photoluminescence of nanolaminates makes them prominent materials for optical biosensors ap...

Tuning Optical Properties of Al2O3/ZnO Nanolaminates Synthesized by Atomic Layer Deposition

Aluminum-doped zinc oxide (AZO) films were grown by atomic layer deposition at 200 °C. The influence of Al content on the structure, optical, and electrical properties of AZO films was investigated. The X-ray diffraction spectra revealed that the grown ZnAlO films have a hexagonal structure with a preferential c-axis orientation perpendicular to the substrate surface. Furthermore, a 0.1° peak shift at a diffraction angle of 34.5° from the wurtzite structure to higher values was observed after Al doping. The X-ray photoelectron spectra of AZO film showed that Zn exists only in the oxide states with an oxygen-deficient ZnO1-x matrix. In photoluminescence studies, the intensity of the dominant peak at ∼380 nm was found to decrease with increasing Al doping concentration. In addition, a minimum resistivity of 9.36 × 10–4 Ωcm was obtained for the AZO film with 2.7 at.% Al.

Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition

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Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition