https://par.nsf.gov/servlets/purl/10107309

ShengBTE: A solver of the Boltzmann transport equation for phonons ☆

Despite their limited spatial extent, freshwater ecosystems host remarkable biodiversity, including one-third of all vertebrate species. This biodiversity is declining dramatically: Globally, wetlands are vanishing three times faster than forests, and freshwater vertebrate populations have fallen more than twice as steeply as terrestrial or marine populations. Threats to freshwater biodiversity are well documented but coordinated action to reverse the decline is lacking. We present an Emergency Recovery Plan to bend the curve of freshwater biodiversity loss. Priority actions include accelerating implementation of environmental flows; improving water quality; protecting and restoring critical habitats; managing the exploitation of freshwater ecosystem resources, especially species and riverine aggregates; preventing and controlling nonnative species invasions; and safeguarding and restoring river connectivity. We recommend adjustments to targets and indicators for the Convention on Biological Diversity and the Sustainable Development Goals and roles for national and international state and nonstate actors.

/pdf/bending-the-curve-of-global-freshwater-biodiversity-loss-an-4gve49o1jh.pdf

Bending the Curve of Global Freshwater Biodiversity Loss: An Emergency Recovery Plan.

Women and Human Development. Martha C. Nussbaum. New York: Cambridge University Press, 2000, 303 pp.

Women and Human Development.

The global demand for data storage and processing has increased exponentially in recent decades. To respond to this demand, research efforts have been devoted to the development of non-volatile memory and neuro-inspired computing technologies. Chalcogenide phase-change materials (PCMs) are leading candidates for such applications, and they have become technologically mature with recently released competitive products. In this Review, we focus on the mechanisms of the crystallization dynamics of PCMs by discussing structural and kinetic experiments, as well as ab initio atomistic modelling and materials design. Based on the knowledge at the atomistic level, we depict routes to improve the parameters of phase-change devices for universal memory. Moreover, we discuss the role of crystallization in enabling neuro-inspired computing using PCMs. Finally, we present an outlook for future opportunities of PCMs, including all-photonic memories and processors, flexible displays with nanopixel resolution and nanoscale switches and controllers. Chalcogenide phase-change materials (PCMs) are leading candidates for non-volatile memory and neuro-inspired computing devices. This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.

Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory It has recently received particular attention because of its great potential for brain-like neuromorphic applications Phase-change materials, also known as Chalcogenide alloys, exhibit several especially advantageous traits for non-volatile applications These include scalability, fast switching speeds, low switching energy and outstanding thermal stability As a result, most research to date has sought to identify electrical applications for phase-change materials in relation to phase-change random access memory, phase-change memristors and phase-change neuro networks, while overlooking their potential for non-volatile photonic applications To address this issue, we provide a comprehensive review that examines the remarkable physical properties of phase-change materials for photonic applications, together with emerging phase-change photonic devices The review begins by presenting the atomic structure and physical properties of phase-change materials, followed by an elaboration of the issues that phase-change materials are currently facing and the strategies being developed to overcome them The current state-of-the-art and technical challenges confronting phase-change materials in relation to non-volatile photonic applications, such as phase-change photonic memory, phase-change photonic neuro-networks, phase-change metasurfaces and phase-change color displays are then considered The review concludes by discussing the outlook for successfully implementing phase-change materials in emerging photonic domains

/pdf/overview-of-phase-change-materials-based-photonic-devices-3ovbwxam2j.pdf

Overview of Phase-Change Materials Based Photonic Devices

Strategic flood risk management: Comparing international challenges and developing common approaches

A mark-length write strategy for multiterabit per square inch scanned-probe memories is described that promises to increase the achievable user density by at least 50%, and potentially up to 100% or more, over conventional approaches. The viability of the write strategy has been demonstrated by experimental scanning probe write/read measurements on phase-change (GeSbTe) media. The advantages offered by adopting mark-length recording are likely to be equally applicable to other forms of scanned probe storage.

/pdf/write-strategies-for-multiterabit-per-square-inch-scanned-d6fd8wjtoo.pdf

Write strategies for multiterabit per square inch scanned-probe phase-change memories

Comparative findings from girls’ education projects in Gujarat, India, and Shaanxi, China, are used to explore two questions: How and under what conditions does schooling contribute to girls’ instrumental and intrinsic empowerment? What does it mean to become an educated rural girl in contexts where girls are marginalized? A review of scholarship on empowerment, and the role of schools in enabling that process, is followed by an examination of the school/empowerment link in the case study projects, which to varying degrees have succeeded in assisting girls to gain resources, capabilities, experiences, and networks that expand the lenses through which they see themselves and their authority in the world. Three intertwining processes that affect schooling’s potential to enable girls’ empowerment include: 1.) expanding educational access and opportunities; 2.) declining cultures and economies of son preference; and 3.) shifting levels of “trust” in schools as a critical “good” for girls’ futures. Our designation of participating girls as “millennials” refers both to the era in which they are coming of age, and to how their capabilities, aspirations, and identifications as schoolgirls, daughters, and laborers have been shaped by global, national, and local reinterpretations of the world’s Millennium Development Goals.

Situating Empowerment for Millennial Schoolgirls in Gujarat, India and Shaanxi, China

Phase-change materials exhibit some remarkable properties. They can be crystallized in picoseconds and amorphized in femtoseconds, but remain stable against spontaneous crystallization for many years. They exhibit huge differences in optical and electrical properties between the amorphous and crystalline phases. Such properties have led, over the last four decades, to the successful development of both optical and electrical non-volatile phase-change memories. However, such binary memories only ‘scratch the surface’ in terms the remarkable potential applications of phase-change materials and devices, which extend to arithmetic, logical and bio-inspired (or neuromorphic) processing. In this paper we introduce and explain some of this remarkable functionality inherent to phase-change systems. Phase-change device operating in accumulation mode. This provides the basic mechanism for providing arithmetic, logic and neuronal type processing.

Phase‐change processors, memristors and memflectors

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