Inorganic semiconductor nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating the size and dimensionality dependence of their properties for potential applications. The use of such nanostructures with tailored geometries as building blocks is also expected to play crucial roles in future nanodevices. Since the discovery of carbon nanotubes much attention has been paid to exploring the usage of inorganic semiconductor nanostructures as field-emitters due to their low work functions, high aspect ratios and mechanical stabilities, and high electrical and thermal conductivities. This article provides a comprehensive review of the state-of-the-art research activities in the field. It mainly focuses on the most widely studied inorganic nanostructures, such as ZnO, ZnS, Si, WO3, AlN, SiC, and their field-emission properties. We begin with a survey of inorganic semiconductor nanostructures and the field-emission principle, and then discuss the recent progresses on several kinds of important nanostructures and their field-emission characteristics in detail and overview some additional inorganic semiconducting nanomaterials in short. Finally, we conclude this review with some perspectives and outlook on the future developments in this area.

Inorganic semiconductor nanostructures and their field-emission applications

Here, a facile and effective route toward full control of vertical ZnO nanorod (NR)/nanowire (NW) arrays in centimeter-scale areas and considerable improvement of fleld-emission (FE) performance is reported. Controlled deformation ofcolloidal crystal monolayer templates is introduced by heating near glass-transition temperature. The NR/NW density, uniformity, and tapering were all adjusted through selection of template size and deformation, and electrolyte composition. In line with the adjustments, the field-emission performance ofthe arrays is significantly improved. A low turn-on electric field of 1.8 V μm -1 , a field-enhancement factor of up to 5 750, and an emitting current density of up to 2.5 mA cm -2 were obtained. These improved parameters would benefit their potential application in cold-cathode-based electronics.

Template Deformation-Tailored ZnO Nanorod/Nanowire Arrays: Full Growth Control and Optimization of Field-Emission

A green, reusable SERS film with high sensitivity for in-situ detection of thiram in apple juice

In our study, we introduced a rapid, low-cost and nondestructive ‘surface spray’ method to achieve the quantitative detection of the pesticide residues on fruits skins Taking advantage of the high enhancement ability of the surface-enhanced Raman spectroscopy (SERS) of the optimized Ag nanoparticles colloid, the limit of detection (LOD) of paraquat (PQ) on the peels of pears and apples could reach the order of magnitude of 10−9 M, much lower than the maximum residue limit of 005 mg/kg (∼10−4 M) in a large number of countries including the USA and China The quantitative detection of PQ was achieved as well This opens a new avenue for advancing the applications of SERS technique in the fields of food safety, drug security, and environment monitoring

Ultrasensitive and quantitative detection of paraquat on fruits skins via surface-enhanced Raman spectroscopy

Recyclable three-dimensional Ag nanoparticle-decorated TiO2 nanorod arrays for surface-enhanced Raman scattering.

Ag nanoparticles (NPs) coated with silica nanolayers were decorated onto a large-scale and uniform silicon nanowire array (SiNWA) by simple chemical etching and metal reduction processes. The three-dimensional Ag/SiNWAs thus formed are employed as a substrate for surface-enhanced Raman scattering (SERS), and a detection limit for rhodamine 6G as low as 10?16?M and a Raman enhancement factor as large as 1014 were obtained. Simulation results show that two kinds of inter-Ag-NP nanogaps in three-dimensional geometry create a huge number of SERS ?hot spots? where electromagnetic fields are substantially amplified, contributing to the higher SERS sensitivity and lower detection limit. The excellent SERS stability of Ag/SiNWAs is attributed to the presence of the SiO2 nanolayer around Ag NPs that prevented the Ag NP surface from being oxidized. The calibration of the Raman peak intensities of rhodamine 6G and thiram allowed their quantitative detection. Our finding is a significant advance in developing SERS substrates for the fast and quantitative detection of trace organic molecules.

https://iopscience.iop.org/article/10.1088/0957-4484/24/33/335501/pdf

Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable substrates for surface-enhanced Raman scattering

A large scale heterostructure array of ZnO nanowires/silicon nanoporous pillar array (Si-NPA) was prepared by a self-catalytic thermal evaporation and vapor-phase transport method, and an ultrahigh field emission current density of 1.55 mA cm−2 was obtained under an operating electric field of 4.0 V μm−1, with a low turn-on field of 1.65 V μm−1. The enhancement factor calculated according to the Fowler–Nordheim theory was ∼3141. The excellent field emission performance was attributed to the unique structure of ZnO/Si-NPA, especially the formation of ZnO nanowires on regular Si pillar array. Our work indicated that ZnO/Si-NPA might be an ideal candidate cathode of potential applications in flat panel displays and high brightness electron sources.

Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array

Hierarchical ZnO/Si nanoheterostructure was prepared by growing oriented ZnO nanowire bundles onto the top of nanoporous silicon pillar array (NSPA) via a self-catalytic thermal evaporation and vapor-phase transport method. Samples were carefully characterized using field emission scanning electron microscopy, x-ray diffraction, and luminescence spectroscopy. One ultraviolet, one blue-green, and two red emission bands were observed in ZnO/NSPA, and the emission mechanism is discussed by developing a model-based energy band diagram. The origins of the ultraviolet and blue-green photoluminescence (PL) bands were attributed to the emission from the band edge transition and surface states of oxygen vacancies of ZnO, while two red PL bands originated from NSPA and could be well explained by the quantum confinement-luminescence center model. The realization of such all solid and wide wavelength nanodevice might be both meaningful for developing new concept lighting devices and potentially extended to fabricate hierarchical Si-based nanoheterostructures in fabricating other optoelectronic nanodevices.

Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure

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Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable substrates for surface-enhanced Raman scattering

Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array

Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure