11 Papers
12 Citations
Le Wang is an academic researcher from Beijing University of Technology. The author has contributed to research in topics: Graphene & Etching (microfabrication). The author has an hindex of 5, co-authored 11 publications.
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Papers
Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst.
Yibo Dong,Yiyang Xie,Chen Xu,Yafei Fu,Xing Fan,Xuejian Li,Le Wang,Fangzhu Xiong,Weiling Guo,Guanzhong Pan,Qiuhua Wang,Fengsong Qian,Jie Sun,Jie Sun +13 more
TL;DR: By using this method, transfer-free, lithography-free and fast growth of graphene realized, and the graphene quality is intrinsically better than catalyst-free growth.
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Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Yafei Fu,Jie Sun,Zaifa Du,Weiling Guo,Chunli Yan,Fangzhu Xiong,Le Wang,Yibo Dong,Chen Xu,Jun Deng,Tailiang Guo,Qun Frank Yan +11 more
TL;DR: This research designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a graphene FET connected in series, and opens the gateway to a new field where other two-dimensional materials can be used as FET channel materials to further improve transfer properties.
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In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application
Yibo Dong,Sheng Guo,Huahai Mao,Chen Xu,Yiyang Xie,Jun Deng,Le Wang,Zaifa Du,Fangzhu Xiong,Jie Sun +9 more
- 28 Jan 2020
TL;DR: In this paper, a technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 degrees C. The graphene growth is catalyzed by a Ni-Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free and almost wrinkle-free, with a high repeatability and rapid growth.
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Transfer-free graphene-like thin films on GaN LED epiwafers grown by PECVD using an ultrathin Pt catalyst for transparent electrode applications
TL;DR: This work grew transfer-free graphene-like thin films directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.
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Chemical vapor deposition of graphene on refractory metals: The attempt of growth at much higher temperature
Xing Fan,Jie Sun,Weiling Guo,Xiaoxing Ke,Chunli Yan,Xuejian Li,Yibo Dong,Fangzhu Xiong,Yafei Fu,Le Wang,Jun Deng,Chen Xu +11 more
TL;DR: In this article, the authors systematically investigated the graphene deposition on refractory metals with extremely high melting points, and the growth parameters and material characterizations were given in detail, which contributes to the fundamental understanding of the graphene growth theory and technology.
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