ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with, e.g., Cd and Mg, especially attractive for light emitters in the blue/ultraviolet (UV) spectral region. Unfortunately, as with other wide-gap semiconductors, ZnO suffers from the doping asymmetry problem, in that the n-type conductivity can be obtained rather easily, but p-type doping proved to be a formidable challenge. This doping asymmetry problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and potential laser diodes. In this paper, we provide a critical review of the current experimental efforts focused on achieving p-type ZnO and discuss the proposed approaches which could possibly be used to overcome the p-type problem.

Doping Asymmetry Problem in ZnO: Current Status and Outlook

: ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fueled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with e.g. Cd and Mg, especially attractive for light emitters in the blue/UV spectral region. Unfortunately, as with other wide-gap semiconductors, ZnO suffers from the doping asymmetry problem, in that the n-type conductivity can be obtained rather easily, but p-type doping proved to be a formidable challenge. This doping asymmetry problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and potential laser diodes. In this article, we provide a critical review of the current experimental efforts focused on achieving p-type ZnO and discuss the proposed approaches which could possibly be used to overcome the p-type problem.

/pdf/doping-asymmetry-problem-in-zno-current-status-and-outlook-a-478lwj258j.pdf

Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

N-doped ZnO nanowires are synthesized at a relatively low growth temperature of 500 °C by directly heating zinc powder using NH3 as the dopant. The incorporation of N into the ZnO nanowires is experimentally confirmed by x-ray photoelectron spectroscopy, Raman spectra and photoluminescence measurements. By combining post annealing experiments after growth with first-principles calculations, the detailed migration mechanism of N and compensation mechanism in N-doped ZnO nanowires are systematically studied. The larger aspect ratio of nanowires favors the formation of oxygen vacancy and out-diffusion of substitutional N (NO), making NO in ZnO nanowires always compensated by hydrogen interstitials (HI). Our results can help to explain the challenge in getting p-type ZnO and shed new light on the possible realization of p-type doping of ZnO in the future.

Compensation mechanism in N-doped ZnO nanowires

Demand for efficient solid-state lighting (SSL) devices has accelerated in recent years and will continue to grow in the foreseeable future. As a result, interest in developing advanced optoelectronic devices such as light-emitting diodes (LEDs), laser diodes, and photodetectors is increasing. These optoelectronic devices require the use of compound semiconductors with a direct bandgap. In the past, this role was mainly dominated by GaAs and InP compound semiconductors.

ZnO Doping and Defect Engineering—A Review

Structural and electrical properties of nitrogen-doped ZnO thin films

Properties of N-doped ZnO thin films in annealing process

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Properties of N-doped ZnO thin films in annealing process