We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

https://export.arxiv.org/pdf/2402.03085v1.pdf

Designing Topology and Fractionalization in Narrow Gap Semiconductor Films via Electrostatic Engineering

Strong singularities in the electronic density of states amplify correlation effects and play a key role in determining the ordering instabilities in various materials. Recently high order van Hove singularities (VHSs) with diverging power-law scaling have been classified in single-band electron models. We show that the 110 surface of Bismuth exhibits high order VHS with unusually high exponent of -0.7. Detailed mapping of the surface band structure using scanning tunneling microscopy and spectroscopy shows that this singularity occurs in close proximity with Dirac bands located at the center of the surface Brillouin zone. The enhanced power-law divergence is shown to originate from the anisotropic flattening of the Dirac band just above the Dirac node. Such near-coexistence of massless Dirac electrons and ultra-massive saddle points enables to study the interplay of high order VHS and Dirac fermions.

pdf/visualizing-near-coexistence-of-massless-dirac-electrons-and-9xrpznvz.pdf

Visualizing near-coexistence of massless Dirac electrons and ultra-massive saddle point electrons

Metallic nanosheets fill the gap

Edge state stabilization and control in 2D topological crystalline insulators

News and views (7&amp;8)

Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. We present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride, we produce ultrathin crystals less than 10 nanometers thick with flat surfaces. Cryogenic measurements of the ultrathin bismuth demonstrate high-quality electronic transport exhibiting quantum oscillations and a 10x larger residual resistance ratio compared to thin films grown by molecular beam epitaxy. Our vdW mold-growth technique

pdf/ultrathin-crystals-of-bismuth-grown-inside-atomically-smooth-15m85ozx.pdf

Ultrathin crystals of bismuth grown inside atomically-smooth van der Waals materials

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Ultrathin crystals of bismuth grown inside atomically-smooth van der Waals materials