L.Y. Yang
Nanyang Technological University
12 Papers
30 Citations
L.Y. Yang is an academic researcher from Nanyang Technological University. The author has contributed to research in topics: Breakdown voltage & Copper interconnect. The author has an hindex of 5, co-authored 10 publications. Previous affiliations of L.Y. Yang include Chartered Semiconductor Manufacturing & Singapore General Hospital.
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Papers
Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
TL;DR: In this article, comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques were conducted, and it was found that SiCN was much better than TaN for the Cu-Ultra low k (ULK) integration.
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Ta/SiCN bilayer barrier for Cu–ultra low k integration
TL;DR: In this article, the effect of a SiCN/Ta bilayer barrier on the electrical properties and thermal stability of single damascene lines for Cu-ultra low k integration was investigated.
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The M351T BCR-ABL Kinase Mutation Is Uncommon in Asian Patients with Imatinib-Resistant Chronic Myeloid Leukemia: Possible Relationship with Imatinib Plasma Levels.
Ai Leen Ang,Zhenping Wang,L.Y. Yang,Vallalan Natesan,Michelle Poon,Liang Piu Koh,Yeow Tee Goh,Balram Chowbay,Charles Chuah +8 more
TL;DR: The study suggests that the incidence of certain BCR-ABL kinase domain mutations may vary in different ethnic origins and that this variation may be related to different pharmacokinetic profiles.
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Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnects
TL;DR: In this paper, the thermal stability of the Cu(150 nm)/Ta(25 nm)/ultra low-k (ULK) porous polymer(600 nm)/SiO 2 /Si structures for multilevel interconnects of the new generation integrated circuits (IC).
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Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines
TL;DR: In this article, an additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition, and it was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200/spl deg/C for 40 h.
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