Although perovskite wafers with a scalable size and thickness are suitable for direct X‐ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2‐DMSO powders are introduced into the MAPbI3 wafer to facilitate crystal growth. The PbI2 powders absorb a certain amount of DMSO to form the PbI2‐DMSO powders and PbI2‐DMSO is converted back into PbI2 under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI3 wafer with the PbI2‐DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI3 wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI3 wafer with a high mobility‐lifetime (µτ) product of 8.70 × 10−4 cm2 V−1 is produced. The MAPbI3‐based direct X‐ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 104 µC Gyair−1 cm−2 and a low detection limit of 410 nGyair s−1.

PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X‐Ray Detection

Cadmium zinc telluride (CZT) possesses excellent material properties for a wide range of applications where room temperature operability, durability, and high efficiency are required. However, because CZT is a challenging material to produce in useful quantities, the growth and fabrication costs have remained high, creating an economic challenge for vendors. While the traveling heater method (THM) is the predominant means of commercial CZT crystal growth, the vertical Bridgman method (VB) is an attractive alternative due to its relatively fast growth rate. However, VB grown CZT has yet to compete with THM grown CZT, particularly in terms of charge collection efficiencies, where the charge collection efficiency is characterized by the single carrier electron mobility lifetime (μτe) product. Despite efforts to overcome this discrepancy, the μτe product in VB grown CZT has remained an order of magnitude lower than THM. Eliminating this difference would bring VB one step closer to outpacing THM in terms of economic feasibility. This paper discusses the development of a unique technique that combines the advantages of both growth methods to better understand this discrepancy and the underlying mechanisms behind it. CZT ingots were grown from melt via VB with highly off-stoichiometric concentrations of tellurium (Te). Melt mixing via accelerated crucible rotation (ACRT) was applied to compensate for any negative effects associated with off-stoichiometry, i.e. flux inclusions. CZT material has been produced at growth rates commensurate with VB (one ingot/week) and with charge collection efficiencies commensurate with THM (mid 10−2 cm2/V) in long bars typical of commercial applications.

Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson's equation. Electron and hole drift mobilities of ${\ensuremath{\mu}}_{e}$ = 830 ${\mathrm{cm}}^{2}$/Vs and ${\ensuremath{\mu}}_{h}$ = 40 ${\mathrm{cm}}^{2}$/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of $(\ensuremath{\mu}\ensuremath{\tau}{)}_{e}$ = 1.9 \ifmmode\times\else\texttimes\fi{} ${10}^{\ensuremath{-}3}$ ${\mathrm{cm}}^{2}$/V and $(\ensuremath{\mu}\ensuremath{\tau}{)}_{h}$ = 1.4 \ifmmode\times\else\texttimes\fi{} ${10}^{\ensuremath{-}4}$ ${\mathrm{cm}}^{2}$/V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of ${E}_{t}={E}_{C}\ensuremath{-}0.73\phantom{\rule{0.2em}{0ex}}\mathrm{eV}$; concentration of 7.3 \ifmmode\times\else\texttimes\fi{} ${10}^{11}$ ${\mathrm{cm}}^{\ensuremath{-}3}$; and electron- and hole-capture cross sections of 3.5 \ifmmode\times\else\texttimes\fi{} ${10}^{\ensuremath{-}14}\phantom{\rule{0.1em}{0ex}}{\mathrm{cm}}^{2}$ and 6.5 \ifmmode\times\else\texttimes\fi{} ${10}^{\ensuremath{-}14}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{2}$, respectively.

Charge Transport and Space-Charge Formation in Cd 1 − x Zn x Te 1 − y Se y Radiation Detectors

CdZnTe (CZT) crystals with thicknesses up to 20 mm and diameters up to 75 mm have become available from Redlen Technologies, Inc. for making large-volume gamma-ray detectors. The modified growth and optimized annealing conditions allowed Redlen to minimize the dark current and improve the uniformity of CZT crystals. Two detector designs, pixelated (H3D) and position-sensitive virtual Frisch-grid (VFG), have greatly benefitted from the availability of such big crystals. Encouraging results from testing of 40 × 40 × 15 mm 3 pixelated detectors were recently reported by the University of Michigan. Here, we evaluated the spectroscopic properties of 8 × 8 × 32 and 10 × 10 × 32 mm 3 crystals configured as position-sensitive VFG detectors. Both digitized waveforms and an analog ASIC were used to read and process the signals from the detectors and test their spectral- and spatial-resolution. The VFG design provides the flexibility to scale-up the dimensions of the detectors for the desired efficiency, while the position information allows for correcting the detectors’ response non-uniformity caused by crystal defects and devices geometry, thereby reducing the instrument cost and making them more feasible for emerging applications in gamma-ray astronomy, nonproliferation, portal screening and nuclear safeguards, where large detector arrays are often required.

Performance of 8×8×32 and 10×10×32 mm3 CdZnTe position-sensitive virtual Frisch-grid detectors for high-energy gamma ray cameras

We combine steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study space-charge formation in ($\mathrm{Cd},\mathrm{Zn})\mathrm{Te}$. Analytical and numerical models describing space-charge-limited photocurrents are developed and excellent agreement with measured data is obtained, especially with the Drift-diffusion model. A linear rise of photocurrent at low voltage is observed and ascribed to the trapping of injected holes in the region close to the cathode side. The influence of space-charge formation, the influence of photoconductive gain, and the contribution of shallow and deep levels to photocurrent-voltage characteristics are numerically simulated. According to measurements and calculations, recent principles used to evaluate detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.

Space-Charge-Limited Photocurrents and Transient Currents in ( Cd , Zn ) Te Radiation Detectors

The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the μτ product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the μτ product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low μτ-product material, <10−3 cm2/V, but give significantly underestimated values for the case of high μτ-product crystals. In this work, we applied the drift-time method to measure the electron lifetimes in long-drift-length (4 cm) standard-grade CZT detectors produced by the Redlen Technologies. We found that the electron μτ product of tested crystals is in the range 0.1–0.2 cm2/V, which is an order of the magnitude higher than any value previously reported for a CZT material. In comparison, using the Hecht equation fitting, we obtained μτ = 2.3 × 10−2 cm2/V for a 2-mm thin planar detector fabricated from the same CZT material.

Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

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Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors