The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T −1/4 to T −1/2 dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature ( T 0 ), hopping distance ( R hop ), average hopping energy ( Δ hop ), Coulomb gap ( Δ C ), localization length ( ξ ) and density of states ( N ( E F )), were determined, and their values were discussed within the models describing conductivity in TiO 2 thin films.

Electrical properties of TiO2 thin films

Recently measurements on various spin-1/2 quantum magnets such as H$_3$LiIr$_2$O$_6$, LiZn$_2$Mo$_3$O$_8$, ZnCu$_3$(OH)$_6$Cl$_2$ and 1T-TaS$_2$ -- all described by magnetic frustration and quenched disorder but with no other common relation -- nevertheless showed apparently universal scaling features at low temperature. In particular the heat capacity C[H,T] in temperature T and magnetic field H exhibits T/H data collapse reminiscent of scaling near a critical point. Here we propose a theory for this scaling collapse based on an emergent random-singlet regime extended to include spin-orbit coupling and antisymmetric Dzyaloshinskii-Moriya (DM) interactions. We derive the scaling $C[H,T]/T \sim H^{-\gamma} F_q[T/H]$ with $F_q[x] = x^{q}$ at small $x$, with $q \in$ (0,1,2) an integer exponent whose value depends on spatial symmetries. The agreement with experiments indicates that a fraction of spins form random valence bonds and that these are surrounded by a quantum paramagnetic phase. We also discuss distinct scaling for magnetization with a $q$-dependent subdominant term enforced by Maxwell's relations.

/pdf/scaling-and-data-collapse-from-local-moments-in-frustrated-1cfhytadiq.pdf

Scaling and data collapse from local moments in frustrated disordered quantum spin systems

As an important II–VI semiconductor material, CdSe has attracted considerable attention due to its unique properties such as a direct band-gap ( 1.7 eV at room temperature) and excellent photoelectrical characteristics that make it a promising material for applications in photodetectors and photovoltaics. Thus far, 1D CdSe nanostructures, such as nanowires (NWs), nanotubes, nanosaws, nanosheets, and nanoribbons, have been successfully synthesized by using various methods including electrochemistry, solution chemical reactions, self-catalysis thermal evaporation, and laser ablation-assisted chemical vapor deposition (CVD). Besides their usage in single-electron transistors and electrochromic and charge-coupling devices, CdSe nanostructures also show application potential in biomolecular labeling, phosphors, and light-emitting diodes. Notably, photodetectors and field-effect transistors (FETs) based on a single CdSe nanoribbon have been recently realized. Nevertheless, the practical applications of CdSe nanostructures are hindered by poor materials properties, due mainly to lack of control over conductivity. Doping is an efficient approach to tune the electrical properties of semiconductors, and has been widely utilized in the semiconductor industry. Indeed, CdSe films and bulk crystals with tunable conductivity have been realized by using indium as n-type dopant. Doping of CdSe nanostruc-

Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping

The constraints on the scaling properties of conserved charge densities in the vicinity of a zero temperature (T), second-order quantum phase transition are studied. We introduce a generalized Wilson ratio, characterizing the nonlinear response to an external field,H, coupling to any conserved charge, and argue that it is a completely universal function ofH/T: this is illustrated by computations on model systems. We also note implications for transitions where the order parameter is a conserved charge (as in aT=0 ferromagnet-paramagnet transition).

Quantum phase transitions and conserved charges

Doping the Kondo insulator FeSi with Al at the Si site introduces carriers and eventually yields metallic conduction. The lattice constant, thermoelectric effect, Hall effect, electrical conductivity, magnetic susceptibility, specific heat, and magnetoresistance have been measured over the $0lxl0.08$ range of Al concentration. All of these quantities show a systematic variation with x including a metal-insulator transition for carrier densities between $2.2\ifmmode\times\else\texttimes\fi{}{10}^{20}$ and $4.4\ifmmode\times\else\texttimes\fi{}{10}^{20} {\mathrm{cm}}^{\ensuremath{-}3}.$ A detailed analysis of the transport and thermodynamic properties reveal a metal-insulator transition closely resembling that of the classic semiconductors (Si:P, Si:B, and Ge:Sb) with one important exception: a substantially enhanced carrier mass.

Heavy fermion metal–Kondo insulator transition in FeSi 1 − x Al x

Hall coefficient of insulating n-type CdSe.

We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to 2.8\ifmmode\times\else\texttimes\fi{}${10}^{18}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.

Scaling behavior of the magnetization of insulating Si:P

The resistivity and the Hall coefficient of indium-doped cadmium selenide with carrier concentrations spanning the insulator-to-metal transition have been measured as a function of temperature. We demonstrate that use of the Hall mobility deduced from these data and careful analysis and application of recent theory yield an estimate of the degree of compensation, K = N/sub A//N/sub D/, for metallic as well as insulating material. Combining these results with Hall coefficient measurements at room temperature, one can then estimate both the number of donors, N/sub D/, and acceptors, N/sub A/. .AE

Study of compensation in insulating and metallic n-type CdSe using transport measurements

We summarize experimental results we have obtained for the susceptibility and non-linear magnetization of insulating n-type and p-type silicon. The behavior of donors and of acceptors is found to be quite similar, and agrees with predictions of the scaling theory of Bhatt and Lee. We also present and discuss some interesting differences which are not yet fully understood.

Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences

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Papers

Hall coefficient of insulating n-type CdSe.

Scaling behavior of the magnetization of insulating Si:P

Study of compensation in insulating and metallic n-type CdSe using transport measurements

Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences