L. K. Howard
University of Surrey
14 Papers
325 Citations
L. K. Howard is an academic researcher from University of Surrey. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 10, co-authored 14 publications.
Chat about Author
Papers
Plastic relaxation of InGaAs grown on GaAs
TL;DR: In this paper, the authors report measurements of the plastic relaxation of InGaAs layers grown above critical thickness on GaAs substrates and the relaxation is accurately hyperbolic, proportional to the reciprocal of the layer thickness, in agreement with a recent geometrical theory of critical thickness.
103
Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
TL;DR: In this paper, photoluminescence has been used to follow the development of the diffusion with time in a single sample and two distinct regimes are seen; a fast initial diffusion and a second steady-state diffusion.
85
Hydrostatic pressure coefficients of the photoluminescence of In x Ga 1 − x As/GaAs strained-layer quantum wells
V. A. Wilkinson,A. D. Prins,J. D. Lambkin,Eoin P. O'Reilly,David J. Dunstan,L. K. Howard,M. T. Emeny +6 more
TL;DR: The photoluminescence of strained strained GaAsAs quantum wells, with x up to 0.225, has been studied under high hydrostatic pressure in a diamond-anvil cell and the measured direct-band-gap pressure coefficients show a marked deviation from theoretical predictions.
45
Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs by high-pressure photoluminescence
TL;DR: In this article, the authors studied the pressure range where the emissions quench and take on the characteristics of the X-minima in the InGaAs/GaAs structures, these transitions display an unexpected pressure coefficient, -2.6 meV/kbar, twice that of theX minima in GaAs.
34
A photoluminescence study of indium desorption from strained Ga1−xInxAs/GaAs
TL;DR: In this paper, the photoluminescence (PL) of groundstate emission from strained quantum wells was used to measure the thermal desorption rate of indium from strained GaInAs grown off a GaAs substrate.
29