L. K. Han
University of Texas at Austin
14 Papers
199 Citations
L. K. Han is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Oxide & Gate dielectric. The author has an hindex of 6, co-authored 12 publications.
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Papers
Effects of chemical composition on the electrical properties of NO‐nitrided SiO2
TL;DR: In this article, the impact of nitrogen concentration and distribution on the electrical and reliability properties of rapid-thermally NO-annealed oxides is studied, and it is shown that the electrical properties of the dielectric under gate and substrate Fowler-Nordheim injection are highly sensitive to the N profile in the polysilicon oxide.
101
Degradation of oxynitride gate dielectric reliability due to boron diffusion
TL;DR: In this article, the impact of the suppression of boron diffusion via nitridation of SiO2 on gate oxide integrity and device reliability was investigated using oxynitride gate dielectrics.
90
Polarity dependence of dielectric breakdown in scaled SiO/sub 2/
L. K. Han,M. Bhat,D. Wristers,J. Fulford,Dim-Lee Kwong +4 more
- 11 Dec 1994
TL;DR: In this article, the authors investigated the polarity dependence of dielectric breakdown under constant current stress in scaled SiO/sub 2/ dielectrics and showed that high-field-induced interface state generation is reduced as oxide thickness scales down and charge-to-breakdown (Q/sub BD/) for positive gate bias (+V/sub g/) increases with decreasing oxide thickness.
54
Recent developments in ultra thin oxynitride gate dielectrics
TL;DR: In this article, a review of N 2 O-and NO-based oxynitride gate dielectrics for CMOS ULSI applications is presented, where several issues like thickness scaling, growth kinetics, chemical composition, electrical properties, hot-carrier reliability, and EEPROM applications of these dielectric are discussed.
33
Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics
M. Bhat,D. Wristers,J. Yan,L. K. Han,J. Fulford,Dim-Lee Kwong +5 more
- 11 Dec 1994
TL;DR: In this paper, the performance and hot-carrier reliability of N- and P-channel MOSFETs with oxynitride gate dielectrics fabricated by rapid thermal nitridation of thermally grown SiO/sub 2/ in pure nitric oxide (NO) ambient were investigated.
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