This paper describes a novel distance-sensor concept based on photodiodes in metal-semiconductor-metal technology (MSM). MSM photodiodes can be operated as electrooptical mixers functioning similar to the so-called photonic mixing device (PMD). This paper employs the correlation techniques previously used with the PMD to the MSM. First, experimental results obtained with the MSM inserted into the authors' standard laboratory setup are provided. Additionally, different configurations well suited for mixer operation of the MSM are pointed out. Throughout this paper, similarities between the PMD and MSM are pointed out, as well as key differences.

Novel optical distance sensor based on MSM technology

High-responsivity metal–semiconductor–metal TiO2 UV photodetectors with Ni and Au electrodes were fabricated identically. Their Schottky barrier heights and photocurrent gain mechanism were studied. The effective barrier height Φ and ideality factor n were evaluated according to the thermionic emission theory. The result that ΦNi was lower than ΦAu may be attributed to the electron transfer from Ni to the TiO2 substrate, which would lead to a dipole layer and, accordingly, decrease the barrier height. In addition, the I–V characteristics of the Ni/TiO2/Ni and Au/TiO2/Au photodetectors were observed. A significant internal gain was obtained, and the mechanism of the internal gain was studied by the phototransistor model in detail.

Schottky barrier characteristics and internal gain mechanism of TiO 2 UV detectors

A method and apparatus includes an optical source for a single order single-sideband suppressed-carrier optical signal with a bandwidth that scales from over 1 gigaHertz to greater than 20 gigaHertz. In an example embodiment, an apparatus includes a stable laser source configured to output an optical carrier signal at a carrier frequency. The apparatus includes a radio frequency electrical source configured to output an electrical radio frequency signal with a radio frequency bandwidth less than one octave. The apparatus also includes an optical modulator configured to output an optical signal with the optical carrier signal modulated by the radio frequency signal in a plurality of orders of optical frequency sidebands. The apparatus further includes an optical filter configured to pass one single order optical frequency sideband of the optical signal.

Techniques for single sideband suppressed carrier (SSBSC) optical signals that scale to bandwidths over 20 gigahertz

Optical surface profile measurement using phase retrieval by tuning the illumination wavelength

This paper describes a novel distance-sensor concept based on photodiodes in metal-semiconductor-metal technology (MSM). MSM photodiodes can be operated as opto-electronic mixers (OEM) functioning similar to the so-called photonic mixing device (PMD). This paper employs the correlation techniques previously used with the PMD to the MSM. First experimental results obtained with the MSM inserted into the authors' standard lab setup previously used for PMD testing are provided Additionally different configurations well suited for mixer operation of the MSM are pointed out. Throughout this paper, the similarities of PMD and MSM are pointed out as well as the key differences.

Gallium arsenide (GaAs) metal–semiconductor–metal (MSM) photodetectors have unique properties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al0.3Ga0.7As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was ≥29 GHz.

Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation.

A new optical technique for microwave single sideband modulation is reported. It uses metal-semiconductor-metal Schottky photodiodes formed in a GaAs/Al 0.3 Ga 0.7 As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single sideband modulation of the microwave signal, rf and undesired-sideband suppression of 36 dB and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors is greater than or equal to 29 GHz.

GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation

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Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation.

GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation