The effect of indium cluster on enhanced ultraviolet luminescence in AlxInyGa1–x–yN quaternary alloys with increasing Al composition was investigated. X-ray diffraction (XRD), temperature-dependent photoluminescence (PL), transmittance spectra, and Raman scattering measurements have been employed to study the AlxInyGa1–x–yN quaternary alloy. Abnormal S-shaped temperature dependence of PL emissions in high Al content sample originated from carrier localization induced by indium nanoclusters, which is in good agreement with the pure InN mode measured by Raman scattering. A large Stokes shift between the emission peak and the absorption edge is also found in the high Al content sample. All these observations suggested that the enhancement of carrier localization by indium nanoclusters is responsible for the increase in radiative recombination probability with increasing Al composition. Our results demonstrated that AlxInyGa1–x–yN quaternary alloy can exhibit a larger band gap than that of GaN and enhanced ul...

Study of Ultraviolet Emission Enhancement in AlxInyGa1–x–yN Quaternary Alloy Film

In this paper, the influence of the growth temperature on the structural quality of AlInGaN epilayer on the GaN/sapphire substrate grown by metal–organic chemical vapor deposition has been studied The AlInGaN epilayers has been characterized by high-resolution X-ray diffractometer, atomic force microscopy, photoluminescence spectra and Raman scattering spectrometer The growth temperature is believed to have a direct influence on the quality of the AlInGaN epilayer Upon optimizing the growth temperature, at 890 °C a high crystalline quality with a full width at half maxima for the (0004) and (10–15) planes are 312 and 618 arc-sec, respectively has been achieved It has been found that the number of V-defect pits at high growth temperature can be minimized The AlInGaN also revealed atomic level step with a root mean square roughness of 013 nm Other than the AlInGaN related room temperature photoluminescence peak, two emissions originate from InGaN-like clusters and the AlInGaN random matrix, respectively In the Raman spectra, the mode at 748 cm−1 is attributed to the A1 (LO) mode of AlInGaN The mode at 680 cm−1 is attributed to InGaN clustering and assigned as A1 (LO) mode

The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD

A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.

http://iopscience.iop.org/article/10.1088/1674-1056/26/1/017803/pdf

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier*

A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire (0001). Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AlInGaN (χmin = 1.5%) with GaN buffer layer. The channeling angular scan around an off-normal 113 axis in the {100} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AlInGaN. The resulting AlInGaN is subjected to an elastic strain at interfacial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed (eT = 0).

https://iopscience.iop.org/article/10.1088/1674-1056/19/8/087205/pdf

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and characterized by the lateral correlation length L, and the fluctuations of aluminum and indium mole fractions (Δx and Δy) independent to each other. The situation of alloy composition fluctuation is investigated in the following cases. Only x or y fluctuates, and both x and y fluctuate with equal/unequal amplitudes in the same/opposite direction. We find that the scattering with both x and y fluctuating in the same direction is the weakest, while x and y fluctuating in the opposite directions leads to the strongest scattering. This in nature stems from the disparity of the bandgap and polarization in AlInN, AlGaN and GaN. The effects of different parameters, such as x and y, Δx and Δy, L, and the thickness of AlxInyGa1-x-yN barrier l...

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

Growth behavior of AlInGaN films

GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow barrier structure improves the performance of the device, including the super-linear increase of electroluminescence integral intensity, the mitigation of efficiency droop at high current density, the reduction of wavelength drift, the reduction of forward voltage, and the improvement of wall-plug efficiency. This is due to the narrowing of the thickness of the quantum barrier, which results in the smaller electric field among the quantum well, the weakening of the quantum confinement Stark effect, the more uniform distribution of carriers across the active region of the device, and the suppression of electron leakage.

https://aip.scitation.org/doi/pdf/10.1063/5.0087666

Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode

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Growth behavior of AlInGaN films

Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode