With 100G technologies standardized, in the context of both Ethernet and the optical transport network (OTN), 100G router ports and 100G optical transport interfaces are commercially available. At the same time, heavily data-centric users are starting to ask for higher-rate interfaces. First speculations include 400G as well as 1T as the next possible Ethernet standards. In this article we discuss interface technology options for Ethernet and OTN beyond 100G in light of the current 100G standards, taking into account likely evolution paths of interface technologies over the next 10 years.

Beyond 100G Ethernet

A dual-polarization 10-channel mode (de)multiplexer is proposed and realized with cascaded dual-core adiabatic tapers on a silicon-on-insulator (SOI) platform. The mode demultiplexer has a 2.3 μm-wide multimode bus waveguide, which supports six mode-channels of TE polarization and four mode-channels of TM polarization. These ten mode-channels are (de)multiplexed with five cascaded dual-core adiabatic tapers based on SOI nanowires. The widths for these dual-cores are chosen optimally according to the dispersion curves of the dual-core SOI nanowire, so that the desired highest-order modes of TE- and TM-polarizations are extracted simultaneously. These two extracted mode-channels are coupled very efficiently to the fundamental modes of TE- and TM-polarizations (TE0 and TM0) in the narrow waveguide, respectively, which are then separated by using a polarization beam splitter based on bent directional couplers. A chip consisting of a pair of 10-channel mode (de)multiplexers is fabricated and then tested with data transmission of 30Gbps/channel. The measurement results show that all TM- and TE mode-channels have low crosstalks (–15∼–25 dB) and low excess losses (0.2∼1.8 dB) over a broad wavelength band of ∼90 nm, which makes it WDM (wavelength-division-multiplexing)-compatible and thus suitable for high capacity on-chip optical interconnects.

10-Channel Mode (de)multiplexer with Dual Polarizations

Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

/pdf/silicon-photonic-devices-and-integrated-circuits-6wohukuihl.pdf

Silicon photonic devices and integrated circuits

Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

/pdf/silicon-photonic-integration-in-telecommunications-rmtuhyl3rv.pdf

Silicon photonic integration in telecommunications

We present silicon photonic integrated circuits (PICs) based coherent optical transmitters and receivers for high-speed long-distance fiber optical transmission. High-degree photonic integration is achieved by monolithically integrating silicon electro-optic modulators, germanium photo detectors, silicon nitride-assisted on-chip polarization rotators, thermal phase shifters, and various passive silicon optical devices on a single wafer platform. We demonstrate the use of these PICs for modulating and detecting 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) and 224-Gb/s PDM 16-ary quadrature amplitude modulation (PDM-16-QAM) signals. Transmission and coherent detection of a 112-Gb/s PDM-QPSK signal over 2560-km standard single-mode fiber is also demonstrated. The high-degree photonic integration for silicon PICs promises small-form-factor and low-power-consumption transceivers for future coherent systems that demand high cost efficiency and energy efficiency.

Monolithic Silicon Photonic Integrated Circuits for Compact 100 $^{+}$ Gb/s Coherent Optical Receivers and Transmitters

We describe in further detail a demonstration of a monolithic 1 × 2 silicon wavelength-selective switch in silicon photonics. The switching has a flexible grid with 32 pixels on a pitch of 100 GHz. It is extremely compact, being only 3.0 × 5.5 mm2, and it can potentially be mass-produced by a silicon foundry. It requires improvements in many characteristics, though, most notably insertion loss, resolution, and pixel count.

Monolithic Flexible-Grid 1 $\,\times\,$ 2 Wavelength-Selective Switch in Silicon Photonics

We present a monolithic 1 × 2 wavelength-selective switch in silicon nitride and silicon waveguides. The size is only 5.5 mm × 3.0 mm, and the switching is gridless with 32 pixels on a pitch of 100 GHz.

Monolithic gridless 1 × 2 wavelength-selective switch in silicon

We demonstrate a monolithic eight-channel coarse wavelength-division-multiplexing (CWDM) receiver. It has a spot-size converter in SiO2 and Si3N4, an arrayed-waveguide grating (AWG) in Si3N4, fan-out waveguides in Si, and photodetectors in Ge. By appropriately varying the waveguide widths in the AWG, polarization independence is achieved. The responsivity from fiber to photodiode for the best channel is higher than 0.34 A/W over all polarizations. We demonstrate -20.3-dBm sensitivity at 10-12 bit-error rate at 2.5 Gb/s for one of the channels using a commercial small-form-factor pluggable (SFP) transceiver as a transmitter.

Eight-Channel SiO $_2$ /Si $_3$ N $_4$ /Si/Ge CWDM Receiver

Using a Si photonic integrated circuit and separate SiGe transimpedance amplifiers, we created a high-performance dual-polarization, dual-quadrature coherent receiver. It requires only 16.3-dB optical signal-to-noise ratio to receive a 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying signal at a 10-3 bit-error rate.

Packaged Monolithic Silicon 112-Gb/s Coherent Receiver

In this paper, we realized a monolithic silicon photonic integrated circuit (PIC) for polarization and phase diversity coherent detection. The PIC includes two polarization beam splitters, two 90° optical hybrids, and four pairs of balanced photodiodes implemented as integrated germanium detectors. We tested the PIC using polarization-division multiplexed quadrature phase-shift keyed signals at 43 and at 112 Gb/s.

Monolithic Polarization and Phase Diversity Coherent Receiver in Silicon

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