The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge The favorable optical properties result from a modified band structure transformed from an indirect to a direct one The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials

/pdf/group-iv-direct-band-gap-photonics-methods-challenges-and-51g3knwf2r.pdf

Group IV direct band gap photonics: Methods, Challenges and Opportunities

Germanium based photonic components toward a full silicon/germanium photonic platform

Dark-field electron holography for the measurement of geometric phase.

http://ematweb.cmi.ua.ac.be/emat/pdf/2028.pdf

Dynamic scattering theory for dark-field electron holography of 3D strain fields.

Dynamical effects in strain measurements by dark-field electron holography.

Compressively strained germanium-on-insulator (c-GeOI) substrates with a definitely reduced defect density are expected to yield superior hole mobilities together with low off-state currents in p-type metal oxide semiconductor field effect transistors (MOSFETs). In order to fabricate c-GeOI wafers, we started with double-side polished Si(0 0 1) substrates and grew, by reduced pressure-chemical vapour deposition, Si0.15Ge0.85 virtual substrates (VS) on the front side. The wafer curvature was compensated thanks to the deposition of a thick Ge layer on the backside. We then grew, after a chemical mechanical polishing, various thickness (37–148 nm) Ge layers. They stayed smooth (root-mean-square roughness <5 A) and pseudomorphically strained on the VS underneath (perpendicular lattice parameter: 5.681 A ⇔ bulk Ge lattice parameter: 5.658 A) up to a 74 nm thickness. These c-Ge layers were then bonded on oxidized Si substrates using the SmartCut™ process. The resulting c-GeOI substrates were of high crystalline quality, compressively strained and smooth. The threading dislocations density (8 × 105 cm−2 ⇔ 1.7 × 105 cm−2 for the SiGe VS template used to strain the c-Ge layers) was indeed 20 times less than the one associated with conventional GeOI substrates obtained from thick Ge epilayers. Pseudo-MOSFET measurements were performed to quantify the hole mobility gain in those c-GeOI substrates. A +150% enhancement compared to conventional silicon-on-insulator substrates was evidenced, validating the interest of these stacks.

https://iopscience.iop.org/article/10.1088/0268-1242/25/7/075010/pdf

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates

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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates