Kyle Patterson
University of Texas at Austin
12 Papers
287 Citations
Kyle Patterson is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Photoresist & Extreme ultraviolet lithography. The author has an hindex of 10, co-authored 12 publications.
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Papers
157 nm Resist Materials: A Progress Report.
Takashi Chiba,Raymond J. Hung,Shintaro Yamada,Brian C. Trinque,Miko Yamachika,Colin J. Brodsky,Kyle Patterson,Anthony Vander Heyden,Andrew Jamison,Shang Ho Lin,Mark Somervell,Jeffrey D. Byers,Will Conley,C. Grant Willson +13 more
TL;DR: In this paper, a variety of novel norbornenes that can be polymerized by metal catalyzed addition polymerization to give etch resistant polymer platforms with greatly improved transparency at 157nm and led to the study of acrylic copolymers derived from 2-(trifluoromethyl)acrylic acid.
Polymers for 157-nm photoresist applications: a progress report
Kyle Patterson,Mikio Yamachika,Raymond J. Hung,Colin J. Brodsky,Shintaro Yamada,Mark Somervell,Brian Osborn,Daniel S. Hall,Gordana Dukovic,Jeffrey Byers,Will Conley,C. Grant Willson +11 more
- 23 Jun 2000
TL;DR: In this article, the design of photoresist matrix resin polymers is broken down into subunits, each of which is responsible for a required function in the final material, and the authors have begun collecting gas-phase VUV spectra of these potential subunits to measure their individual absorbance contributions.
Organic imaging materials: a view of the future
TL;DR: In this article, the current generation of photoresists and the on-going development of future generation photoresist technologies are discussed, and a comparison of the two technologies is made.
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157 nm resist materials: Progress report
Colin J. Brodsky,Jeff D. Byers,Will Conley,Raymond J. Hung,Shintaro Yamada,Kyle Patterson,Mark Somervell,Brian C. Trinque,Hoang Vi Tran,Sungseo Cho,Takashi Chiba,Shang Ho Lin,Andrew Thomas Jamieson,Heather F. Johnson,Tony Vander Heyden,C. Grant Willson +15 more
TL;DR: A modular approach to the design of a single layer resist for 157 nm has been undertaken in this paper, where the resist has been conceptually segmented into four functional modules: an acidic group, an acid labile protecting groups, an etch resistant moiety, and a polymer backbone.
Study of the fundamental contributions to line edge roughness in a 193 nm, top surface imaging system
TL;DR: In this paper, the authors investigated top surface imaging systems based on vapor phase silylation for use at a variety of wavelengths, including 193 nm and EUV, and found that poly(p-hydroxystyrene) resins have a combination of properties that limit their utility in this application.