Hardware monitors which can be used by a formal verification tool to exhaustively verify a hardware design for a memory unit. The hardware monitors include detection logic to monitor one or more control signals and/or data signals of an instantiation of the memory unit to detect symbolic writes and symbolic reads. In some examples a symbolic write is a write of symbolic data to a symbolic address; and in other examples a symbolic write is a write of any data to a symbolic address. A symbolic read is a read of the symbolic address. The hardware monitors also include assertion verification logic that verifies an assertion that read data corresponding to a symbolic reads matches write data associated with one or more symbolic writes preceding the read.

Hardware monitor to verify memory units

A method includes reading a representation of a codeword stored in a multi-level-cell (MLC) memory by comparing cell threshold voltages in the MLC memory to hard bit thresholds to generate hard bit values and to soft bit thresholds to generate soft bit values. The hard bit values and the soft bit values are provided to a non-binary decoder that uses probabilistic decoding to obtain decoded data.

Systems and methods of decoding data using soft bits at a non-binary decoder that uses probabilistic decoding

Systems and methods of managing defects in nonvolatile storage systems that can be used to avoid an inadvertent loss of data, while maintaining as much useful memory in the nonvolatile storage systems as possible. The disclosed systems and methods can monitor a plurality of trigger events for detecting possible defects in one or more nonvolatile memory (NVM) devices included in the nonvolatile storage systems, and apply one or more defect management policies to the respective NVM devices based on the types of trigger events that resulted in detection of the possible defects. Such defect management policies can be used proactively to retire memory in the nonvolatile storage systems with increased granularity, focusing the retirement of memory on regions of nonvolatile memory that are likely to contain a defect.

Defect management policies for nand flash memory

Apparatuses and methods associated with shaping codes for memory are provided. One example apparatus comprises an array of memory cells and a shaping component coupled to the array and configured to encode each of a number of received digit patterns according to a mapping of received digit patterns to shaping digit patterns. The mapping of received digit patterns to shaping digit patterns obeys a shaping constraint that limits, to an uppermost amount, an amount of consecutive digits of the shaping digit patterns allowed to have a particular digit value.

Shaping codes for memory

A method, system and memory controller are provided for implementing ECC (Error Correction Codes) control to provide enhanced endurance and data retention of flash memories. The memory controller includes a VT (threshold voltage) monitor to determine VT degradation of cells and blocks; the VT monitor configured to store information about the determined VT degradation; a first ECC engine having a first level of ECC capability; a second ECC engine having a second level of ECC capability, the second level higher than the first level, the second ECC engine having a longer latency than the first ECC engine; a logic to issue a read request to a particular cell/block, and, using the determined VT degradation, use the first ECC engine if the determined VT degradation is less than a threshold and to use the second ECC engine if the determined VT degradation is above the threshold.

Implementing ecc control for enhanced endurance and data retention of flash memories

Memory, modules and methods for using error detection with multi-level memory cells where the number of storage levels of the memory cells is an integer power of a non-binary prime number are provided. Additional circuit and methods are disclosed.

Multiple-level memory cells and error detection

Some embodiments include apparatuses and methods having a memory structure included in a memory device and a control unit included in the memory device. The control unit can provide information obtained from the memory structure during a memory operation to a host device (e.g., a processor) in response to a command from the host device. If the control unit receives a notification from the host device indicating that the host device has detected an error in the information obtained from the memory structure, then a repair unit included in the memory device performs a memory repair operation to repair a portion in the memory structure.

Cooperative memory error detection and repair

Some embodiments include apparatuses and methods having a component to change a value of a bit among a number of M bits of information when the M bits have the same value and when M exceeds a selected value. At least one of such embodiments can include a transmitting component to provide the information to a connection. At least one of such embodiments can include a receiving component to receive the information from the connection. In at least one of such embodiments, the selected value can include a maximum number of consecutive bits having the same value that such a receiving component can be configured to receive. Other embodiments including additional apparatuses and methods are described.

Apparatuses and methods to change information values

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Multiple-level memory cells and error detection

Cooperative memory error detection and repair

Apparatuses and methods to change information values