The formation of a dense and uniform thin layer on the substrates is crucial for the fabrication of high-performance perovskite solar cells (PSCs) containing formamidinium with multiple cations and mixed halide anions. The concentration of defect states, which reduce a cell’s performance by decreasing the open-circuit voltage and short-circuit current density, needs to be as low as possible. We show that the introduction of additional iodide ions into the organic cation solution, which are used to form the perovskite layers through an intramolecular exchanging process, decreases the concentration of deep-level defects. The defect-engineered thin perovskite layers enable the fabrication of PSCs with a certified power conversion efficiency of 22.1% in small cells and 19.7% in 1-square-centimeter cells.

Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells

In recent years, the power conversion efficiency of perovskite solar cells has increased to reach over 20%. Finding an effective means of defect passivation is thought to be a promising route for bringing further increases in the power conversion efficiency and the open-circuit voltage (VOC) of perovskite solar cells. Here, we report the use of an organic halide salt phenethylammonium iodide (PEAI) on HC(NH2)2–CH3NH3 mixed perovskite films for surface defect passivation. We find that PEAI can form on the perovskite surface and results in higher-efficiency cells by reducing the defects and suppressing non-radiative recombination. As a result, planar perovskite solar cells with a certificated efficiency of 23.32% (quasi-steady state) are obtained. In addition, a VOC as high as 1.18 V is achieved at the absorption threshold of 1.53 eV, which is 94.4% of the Shockley–Queisser limit VOC (1.25 V). Planar perovskite solar cells that have been passivated using the organic halide salt phenethylammonium iodide are shown to have suppressed non-radiative recombination and operate with a certified power conversion efficiency of 23.3%.

Surface passivation of perovskite film for efficient solar cells

All of the cations currently used in perovskite solar cells abide by the tolerance factor for incorporation into the lattice. We show that the small and oxidation-stable rubidium cation (Rb + ) can be embedded into a “cation cascade” to create perovskite materials with excellent material properties. We achieved stabilized efficiencies of up to 21.6% (average value, 20.2%) on small areas (and a stabilized 19.0% on a cell 0.5 square centimeters in area) as well as an electroluminescence of 3.8%. The open-circuit voltage of 1.24 volts at a band gap of 1.63 electron volts leads to a loss in potential of 0.39 volts, versus 0.4 volts for commercial silicon cells. Polymer-coated cells maintained 95% of their initial performance at 85°C for 500 hours under full illumination and maximum power point tracking.

https://science.sciencemag.org/content/sci/early/2016/09/28/science.aah5557.full.pdf

Incorporation of rubidium cations into perovskite solar cells improves photovoltaic performance

Today's best perovskite solar cells use a mixture of formamidinium and methylammonium as the monovalent cations. With the addition of inorganic cesium, the resulting triple cation perovskite compositions are thermally more stable, contain less phase impurities and are less sensitive to processing conditions. This enables more reproducible device performances to reach a stabilized power output of 21.1% and ∼18% after 250 hours under operational conditions. These properties are key for the industrialization of perovskite photovoltaics.

/pdf/cesium-containing-triple-cation-perovskite-solar-cells-1krwv25jzt.pdf

Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency

Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1–3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4–8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively—still well behind the performance of organic LEDs10–12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device—an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display. A strategy for managing the compositional distribution in metal halide perovskite light-emitting diodes enables them to surpass 20% external quantum efficiency—a step towards their practical application in lighting and displays.

/pdf/perovskite-light-emitting-diodes-with-external-quantum-4xijmv6ocq.pdf

Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

Mots-clefs: carbon fibers ; carbon materials ; perovskite solar cells ; photovoltaic devices ; stability Reference EPFL-ARTICLE-225138doi:10.1002/aenm.201601116Afficher la publication dans Web of Science Notice creee le 2017-01-24, modifiee le 2017-05-12

Highly Efficient and Stable Perovskite Solar Cells based on a Low-Cost Carbon Cloth

Metal-halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light-emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift-off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal-halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin-film transistors (TFTs) with methyl-ammonium lead iodide (MAPbI3 ) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI3 (>1000) leads to excellent low-voltage TFT switching capabilities with subthreshold swings ≈80 mV decade-1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low-power Au-MAPbI3 -Au photodetectors with close-to-ideal linear response (R2 = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low-power integrated (opto-)electronic systems based on metal-halide perovskites.

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process.

Dry-pressed anodized titania nanotube/CH3NH3PbI3 single crystal heterojunctions: The beneficial role of N doping

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Highly Efficient and Stable Perovskite Solar Cells based on a Low-Cost Carbon Cloth

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process.

Dry-pressed anodized titania nanotube/CH3NH3PbI3 single crystal heterojunctions: The beneficial role of N doping