Koji Tsunoda
Fujitsu
46 Papers
277 Citations
Koji Tsunoda is an academic researcher from Fujitsu. The author has contributed to research in topics: Magnetoresistive random-access memory & Tunnel magnetoresistance. The author has an hindex of 13, co-authored 46 publications.
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Papers
Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step MBE
Shigekazu Okumura,Ryo Suzuki,Koji Tsunoda,Hironori Nishino,Masakazu Sugiyama +4 more
- 01 May 2019
TL;DR: In this article, a method to eliminate pits without Sb irradiation for device applications was proposed. But, the method was not suitable for low temperature growth and the size of the pits increased as the growth temperature increased.
2
Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer
Chikako Yoshida,Takashi Takenaga,Y. Yamazaki,Haruka Uehara,Hideyuki Noshiro,Koji Tsunoda,Yoshihisa Iba,Akiyoshi Hatada,Masaaki Nakabayashi,Atsushi Takahashi,Masaki Aoki,Toshihiro Sugii +11 more
TL;DR: In this article, the authors derived the direct relation between the offset field of a top-pinned MTJ with a CoPd/Ru/Ta/CoFeB-SAF free layer and the exchange coupling energy value.
2
Patent
Magnetic tunnel junction device and semiconductor memory device
Koji Tsunoda
- 15 Sep 2016
TL;DR: In this article, a magnetic tunnel junction device includes a first magnet tunnel junction including a first free layer and a first pinned layer, the first magnetization direction is configured to be retained in a nonvolatile manner upon being selectively set to either the first direction or the second direction.
2
Cylindrical Ru-SrTiO/sub 3/-Ru capacitor technology for 0.11 /spl mu/m generation DRAMs
C.M. Chu,Masahiro Kiyotoshi,S. Niwa,J. Nakahira,Kazuhiro Eguchi,Soichi Yamazaki,Koji Tsunoda,M. Fukuda,T. Suzuki,Masaaki Nakabayashi,Hiroshi Tomita,C.M. Shiah,D. Matsunaga,Katsuhiko Hieda +13 more
- 12 Jun 2001
TL;DR: In this paper, a cylindrical Ru/ST/Ru capacitor for gigabit-scale DRAMs was developed, which achieved SiO/sub 2/ε equivalent thickness (t/sub eq/) of 0.6 nm and cell capacitance of 18 fF/cell with leakage current of 1.1 fA/cell at /spl plusmn/0.7 V applied voltage.
2
Patent
Magnetic resistance element and magnetic storage device
Chikako Yoshida,親子 吉田,Masaki Aoki,正樹 青木,Takao Ochiai,隆夫 落合,Toshihiro Sugii,寿博 杉井,Atsushi Takahashi,厚 高橋,Koji Tsunoda,浩司 角田,Hideyuki Noshiro,英之 能代,Y. Yamazaki,裕一 山崎,Yoshihisa Iba,義久 射場,Masaaki Nakabayashi,正明 中林,Akiyoshi Hatada,明良 畑田 +21 more
- 31 Aug 2011
TL;DR: In this article, the authors proposed a multivalued memory consisting of insertion layers 1a, 1b composed of Ta, lower magnetization layers 2a, 2b contacting the insertion layers on the insertion layer and each having magnetic anisotropy in a vertical direction with respect to a principal surface.
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