In order to take the full advantage of the high-temperature SiC and GaN operating devices, package materials able to withstand high-temperature storage and large thermal cycles have been investigated. The temperature under consideration here are higher than 200 °C. Such temperatures are required for several potential applications such as down-hole oil and gas industry for well logging, aircrafts, automotive, and space exploration. This review focuses on the reliability of a selection of potential components or materials used in the package assembly as the substrates, the die attaches, the interconnections, and the encapsulation materials. It reveals that, substrates with low coefficient of thermal expansion (CTE) conductors or with higher fracture resistant ceramics are potential candidates for high temperatures. Die attaches and interconnections reliable solutions are also available with the use of compatible metallization schemes. At this level, the reliability can also be improved by reducing the CTE mismatch between assembled materials. The encapsulation remains the most limiting packaging component since hard materials present thermomechanical reliability issues, while soft materials have low degradation temperatures. The review allows identifying reliable components and materials for high-temperature wide bandgap semiconductors and is expected to be very useful for researchers working for the development on high-temperature electronics.

Survey of High-Temperature Reliability of Power Electronics Packaging Components

A review is provided, which first considers low-temperature diffusion bonding with silver nanomaterials as filler materials via thermal sintering for microelectronic applications, and then other recent innovations in low-temperature joining are discussed. The theoretical background and transition of applications from micro to nanoparticle (NP) pastes based on joining using silver filler materials and nanojoining mechanisms are elucidated. The mechanical and electrical properties of sintered silver nanomaterial joints at low temperatures are discussed in terms of the key influencing factors, such as porosity and coverage of substrates, parameters for the sintering processes, and the size and shape of nanomaterials. Further, the use of sintered silver nanomaterials for printable electronics and as robust surface-enhanced Raman spectroscopy substrates by exploiting their optical properties is also considered. Other low-temperature nanojoining strategies such as optical welding of silver nanowires (NWs) throu...

/pdf/joining-of-silver-nanomaterials-at-low-temperatures-507vh15pcd.pdf

Joining of Silver Nanomaterials at Low Temperatures: Processes, Properties, and Applications

For decades soldering has been the technology of choice in die bonding. However, due to worldwide health protection regulations, the most common solder alloys, which contain lead, have been banned. Furthermore, standard solders cannot fulfil the reliability requirements of future power electronic devices. New interconnection technologies have to be developed. One of them is pressure sintering (p=30‥50 MPa) of silver flakes below 300 °C. It forms a strong, highly electrically and thermally conductive bond. In order to lower the level of pressure, silver nanoparticles can be used. Shear tests have shown that even 5 s of sintering, a temperature of 225 °C, or a pressure as low as 2 MPa is sufficient to generate bonds comparable to solder and high pressure sinter joints if the remaining parameters (p, t and T, respectively) are set correctly. However, strength is only a necessary criterion as aging comes into play. Therefore, reliability tests using thermal cycling and power cycling were run. These returned superior reliability of the sintered samples. 160 million of the power cycles between +45 and +175 °C run in this work can be extrapolated using a Coffin-Manson model. Solder joints failed at about 40,000 cycles.

Reliability assessment of sintered nano-silver die attachment for power semiconductors

Sintered silver joint is a porous silver that bonds a semiconductor die to the substrate as part of the packaging process. Sintered Ag is one of the few possible bonding methods to fulfill the operating conditions of wide band-gap (WBG) power device technologies. We review the current technology development of sintered Ag as a bonding material from the perspective of patents filed by various stakeholders since late 1980s. This review addresses the formulation of sintered pastes (i.e., nano-Ag, hybrid Ag, and micron Ag fillers), innovations in the process and equipment to form this Ag joint. This review will provide the insights and confidence to engineers, scientists from universities and industry as well as investors who are developing and commercializing the sintered Ag as a bonding material for microelectronic packaging. [DOI: 10.1115/1.4033069]

Identifying the Development State of Sintered Silver (Ag) as a Bonding Material in the Microelectronic Packaging Via a Patent Landscape Study

Deformation behavior of nanoporous polycrystalline silver. Part I: Microstructure and mechanical properties

Power semiconductor joining through sintering of silver nanoparticles: Evaluation of influence of parameters time, temperature and pressure on density, strength and reliability

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Power semiconductor joining through sintering of silver nanoparticles: Evaluation of influence of parameters time, temperature and pressure on density, strength and reliability