Knisley Thomas
Wayne State University
23 Papers
458 Citations
Knisley Thomas is an academic researcher from Wayne State University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 11, co-authored 23 publications. Previous affiliations of Knisley Thomas include Lam Research.
Chat about Author
Papers
Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films
TL;DR: A short review of the ALD growth of first-row transition metal films is given in this paper, where the current state of precursor and reducing co-reagent development is discussed and key future challenges are outlined.
137
Patent
Atomic layer deposition of transition metal thin films
Charles H. Winter,Knisley Thomas,Thiloka C. Ariyasena +2 more
- 05 Jun 2012
TL;DR: An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including: a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface: MLn (1) wherein: n is 1 to 8; M is a transition metal; L is a ligand; and c) contacting the first modified surfaces with an acid for a second predetermined pulse Time to Form a second modified surface; andc) Contacting the second modifiedsurface with a reducing agent for a third predetermined pulseTime
117
Patent
Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
George Andrew Antonelli,Knisley Thomas,Pramod Subramonium +2 more
- 25 Jun 2014
TL;DR: In this paper, a method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature, followed by heating the substrate at a higher temperature to release the reacted sily lating agent from the surface.
109
Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition
TL;DR: In this article, the atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine.
91
Patent
Thermally stable volatile film precursors
Charles H. Winter,Knisley Thomas,Panditha Koralalage Don Mahesh Chinthaka Karunarathne +2 more
- 17 May 2010
TL;DR: In this paper, a precursor for the deposition of a thin film by atomic layer deposition is provided, where the compound has the formula MxLy where M is a metal and L is an amidrazone derived ligand or an amidate-derived ligand.
85