Klaus Irmscher
Institut für Kristallzüchtung
149 Papers
787 Citations
Klaus Irmscher is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Doping & Band gap. The author has an hindex of 33, co-authored 136 publications.
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Papers
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Zbigniew Galazka,Steffen Ganschow,Klaus Irmscher,Detlef Klimm,Martin Albrecht,Robert Schewski,Mike Pietsch,Tobias Schulz,Andrea Dittmar,Albert Kwasniewski,Raimund Grueneberg,Saud Bin Anooz,Andreas Popp,Uta Juda,Isabelle Hanke,Thomas Schroeder,Thomas Schroeder,Matthias Bickermann,Matthias Bickermann +18 more
TL;DR: In this article, the growth and basic physical properties of transparent semiconducting oxides (TSOs) are compared with those of Ga-based spinels, including MgGa2O4, ZnGa2 O4, and Zn1-xMgxGa 2O4.
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Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
TL;DR: In this paper, the authors investigated the effect of heavy nitrogen-doped 4H-SiC single crystals growing in the argon atmosphere on the formation of planar defects and showed that heavy doping is not a necessary but not sufficient precondition for defect formation.
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Growth, characterization, and properties of bulk SnO2 single crystals
Zbigniew Galazka,Reinhard Uecker,Detlef Klimm,Klaus Irmscher,Mike Pietsch,Robert Schewski,Martin Albrecht,Albert Kwasniewski,Steffen Ganschow,Detlev Schulz,Christo Guguschev,Rainer Bertram,Matthias Bickermann,Roberto Fornari +13 more
TL;DR: In this article, the authors showed that the most volatile species during SnO2 decomposition is, in addition to oxygen, SnO, which is stable in the gas phase at high temperature and reacts again with oxygen at lower temperatures to form SnO 2.
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Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
Klaus Irmscher,Carsten Hartmann,Christo Guguschev,Mike Pietsch,Jürgen Wollweber,Matthias Bickermann +5 more
TL;DR: In this paper, the authors reported the identification of tri-carbon defect in AlN bulk crystals grown by physical vapor transport, which gives rise to a single infrared absorption line at 1769 cm−1 in unintentionally carbon doped crystals.
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