An input string is mapped to a vector of input voltages. The vector is applied to input rows of a dot product engine having memristor elements at intersections of the input rows and output columns. A hash of the input string is determined based on output of the dot product engine as to which the vector of input voltages have been applied to the input rows thereof. An output column may be selected from output voltages of the columns, and the hash determined from the selected column. The output voltage of a column is equal to a sum of a product of the input voltage in each input row and a value of the memristor element at the intersection of the input row and the column. The hash can be used within a filtering technique applied to the input string, such as in the context of network security.

Hash computation using memristor-implemented dot product engine

The present invention relates to a memory device and, more specifically, to a memory device including variable resistive memory cells. According to one embodiment of the present invention, the memory device comprises a memory module including at least one charge pump and a controller controlling the memory module. The controller comprises: a shuffling logic using hash to generate a plurality of pieces of candidate data corresponding to data to be written; a calculation unit calculating the number of bit flips and power consumption for each piece of candidate data based on a comparison result between data stored in the memory module and the pieces of candidate data; and a candidate selection unit selecting data to be stored in the memory module among the pieces of candidate data based on the number of bit flips and peak power consumption. Accordingly, the memory device has increased writing performance and memory life.

Memory device and encoding method thereof

The invention provides a Hash hardware processing device and method based on a resistive random access memory, being characterized in that all source data does not need to be sent to a CPU for calculation of a Hash function, and the operation of inputting the data of the Hash function can be completed in an RRAM according to the current superposition effect, and establishment of a Hash table is achieved in a memory, and a large amount of source data does not need to be sent to the CPU and then sent back to the memory. For the Hash hardware processing device and method, data processing based onthe resistive random access memory can reduce data transfer of the data from the memory end to the processor end, thus particularly having remarkable performance advantage and power consumption advantage for application with large data volume; and the storage data accumulation function realized based on the current superposition principle can be realized by utilizing the RRAM storage unit in theRRAM memory, and the hash table is established, so that data is prevented from being written into the hash table after being read to a CPU end for calculation, so that on one hand, the transportationof a large amount of data from a storage end to the CPU end is reduced, and the requirement on memory access bandwidth is reduced, and on the other hand, the execution efficiency of hash table establishment and query can be improved, and the processing power consumption is reduced.

Hash hardware processing device and method

Provided are a selection delay garbage collection method and a memory system using the same. The selection delay garbage collection method, in order to effectively reduce a waiting time of a read operation by garbage collection, comprises the steps of: requesting garbage collection on at least one of a plurality of memory dies; checking whether a read operation is in a standby state in an event queue; and delaying garbage collection when the read operation is in the standby state.

Selective Delay Garbage Collection Method And Memory System Using The Same

A method for extending the lifetime of a resistive change memory includes generating data and hash candidates by shuffling bit positions of write data with the hash candidates in response to a write request for the resistive change memory, calculating Hamming distances of the generated data and hash candidates from stored data and a stored hash, matching stuck data at a predetermined bit in the resistive change memory with the generated data and hash candidates when the stuck data is at the predetermined bit, and excluding mismatched data and hash candidates that are mismatched with the stuck data among the generated data and hash candidates, finding a data and hash candidate with the shortest Hamming distance among the matched data and hash candidates, and choosing the found data and hash candidate as an encoded data and hash, and storing the encoded data and hash in the resistive change memory.

Method for extending lifetime of resistive change memory and data storage system using the same

According to an embodiment of the present invention, a method for performing garbage collection cooperating with a flash memory device including a flash conversion layer. The method includes: a reception step of requesting garbage collection from the flash conversion layer of the flash memory device; an approval step of transmitting information of approval on a garbage collection request to the flash conversion layer of the flash memory device in a case that a task being executed is related to a flash memory when the garbage collection request is received; a task switching approval step of blocking a tanks being currently executed if a task, not related to a flash memory, exists in a task waiting matrix in a case that a task being executed is related to a flash memory when the garbage collection is received, performs task switching for performing the task, not related to a flash memory, and then transmit the information of approval on garbage collection to the flash conversion layer of the flash memory device; and a disapproval step of disapproving the garbage collection request if the task currently being executed upon reception of the garbage collection request is the task related to a flash memory and the task, not related to a flash memory, does not exist in the task waiting matrix.

Method for performing garbage collection and flash memory apparatus using the method

The objective of the present invention is to improve the lifetime of resistive random-access memory by changing the bit position of data to be written to have a minimum bit flip and using data accordingly A method for improving the lifetime of resistive random-access memory according to a first invention herein comprises steps of: generating a group of data and hash candidates by logic combining bit positions of the group of hash candidates and the data to be stored; calculating a hamming distance by comparing the group of data and hash candidates with the pre-stored data and hash; excluding data candidates mismatched with stuck data by matching the stuck data of the bit with the group of data candidates, if the stuck data are in a predetermined bit within resistive random-access memory; selecting data and hash candidates with the shortest hamming distance out of the group of data and hash candidates as encoding data and hash; and storing the encoded data and hash in the resistive random-access memory

Method for lifetime improvement of resistive change memory and data storage system using it

The present invention relates to a dynamic memory device having a selective refresh function based on a read and write access and to a selective refresh method thereof, wherein a refresh operation is minimized by means of a selective refresh method in a dynamic memory semiconductor device.

Dynamic memory device having selective refresh function based on read and write access, and selective refresh method therefor

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Method for extending lifetime of resistive change memory and data storage system using the same

Method for performing garbage collection and flash memory apparatus using the method

Method for lifetime improvement of resistive change memory and data storage system using it

Dynamic memory device having selective refresh function based on read and write access, and selective refresh method therefor