Ken Verguts
Katholieke Universiteit Leuven
14 Papers
65 Citations
Ken Verguts is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Graphene & Layer (electronics). The author has an hindex of 6, co-authored 13 publications.
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Papers
Controlling Water Intercalation Is Key to a Direct Graphene Transfer.
Ken Verguts,Koen Schouteden,Cheng-Han Wu,Lisanne Peters,Nandi Vrancken,Xiangyu Wu,Zhe Li,Maksiem Erkens,Clement Porret,Cedric Huyghebaert,Chris Van Haesendonck,Stefan De Gendt,Steven Brems +12 more
TL;DR: It is demonstrated that interfacial water can insert between graphene and its growth substrate despite the hydrophobic behavior of graphene, which will enable a more reliable fabrication of van der Waals heterostructure-based devices and applications.
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Epitaxial Al2O3(0001)/Cu(111) Template Development for CVD Graphene Growth
Ken Verguts,Bart Vermeulen,Nandi Vrancken,Koen Schouteden,Chris Van Haesendonck,Cedric Huyghebaert,Marc Heyns,Stefan De Gendt,Steven Brems +8 more
TL;DR: In this article, a single-crystalline Cu(111) template was constructed on top of a 2-inch sapphire wafer to prevent the presence of grain boundaries.
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Graphene delamination using ‘electrochemical methods’: an ion intercalation effect
TL;DR: It is shown that applying a potential is sufficient (current is not needed) to induce ion intercalation and, as a result, graphene delamination, and open the door to avoid Na+ or K+ contamination introduced during currently described electrochemical graphene delaminate graphene.
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Doping Graphene with Substitutional Mn.
Pin-Cheng Lin,Renan Villarreal,Simona Achilli,Harsh Bana,Maya N. Nair,Antonio Tejeda,Ken Verguts,Stefan De Gendt,Manuel Auge,Hans Hofsäss,Steven De Feyter,Giovanni Di Santo,Luca Petaccia,Steven Brems,Guido Fratesi,L. M. C. Pereira +15 more
TL;DR: In this article, the atomic structure of substitutional Mn atoms in a single carbon vacancy and quantitatively quantitatively quantify its concentration in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation.
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