The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.

Method to form a low resistant bond pad interconnect

A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable with the lower rotor via a magnetic force created by the magnets. The engaged upper and lower rotors form a process chamber where a semiconductor wafer is positioned for processing. Process fluids for treating the workpiece are introduced into the process chamber, optionally while the processing head spins the workpiece. Additionally, air flow around and through the process chamber is managed to reduce particle adders on the workpiece.

System for processing a workpiece

A redistribution metallization scheme combines solder bumps (122) and wire bond pads (132) in addition to existing bond pads (102) to enhance the connectivity of a semiconductor device, especially in flip-chip applications. The fabrication method includes forming the additional bond pads during the redistribution deposition step. The metals (204, 206, 208) used in the redistribution layer provide a solderable surface for solder bumping and a bondable surface for wire bonding.

Metal redistribution layer having solderable pads and wire bondable pads

The invention includes an actuator system for a chemical dispensing apparatus where the chemical dispensing apparatus includes a chemical-containing vessel and a housing. The invention also includes an actuator nozzle having a receiving aperture and a dispensing aperture where the receiving aperture is operatively coupled to the vessel to receive the chemicals contained within the vessel. The dispensing aperture is coupled to the receiving aperture and is also connected to a conveying tube to direct the chemical from the vessel, through the tube and into a chemical receiving receptacle. Also included is a structure for ejecting the chemical from the vessel into the actuator nozzle. The actuator nozzle is slidingly and pivotally mounted in the housing and is configured to slide vertically relative to the housing and is also configured to pivot outwardly relative to the housing to permit reciprocal engagement and disengagement of the vessel while maintaining communication with the conveying tube. The actuator nozzle remains in an upward and outwardly pivoted position when the vessel is disengaged from the actuator nozzle to facilitate reengagement of the vessel with the actuator nozzle.

Chemical dispensing apparatus having a pivotal actuator

An interconnection between bonding pads on an integrated circuit chip and corresponding bonding contacts on a substrate are formed. To form the interconnection, a metallization is formed on each of the substrate bonding contacts. Metal ball bond bumps are formed on selective ones of the bonding pads and then coined. The substrate and integrated circuit chip are heated. The coined ball bond bumps are then placed into contact with the corresponding metallizations, pressure and ultrasonic energy are applied, and a metal-to-metal bond is formed between each coined ball bond bump and the corresponding metallization.

Integrated circuit chip to substrate interconnection and method

A method of electrically connecting a tape automated bonding lead (28) to an aluminum input/outpout pad (10) of an integrated circuit includes sequentially sputtering an adhesive layer (16), a diffusion barrier layer (18) and a gold layer (20) on the input/output pad (10). The adhesive layer (16) is a metallic film having good step coverage and adhesive properties to contact the pad (10). The diffusion barrier layer (18) is formed atop the adhesive layer (16) and is sandwiched by the gold layer (20). The method employs 'bumpless' techniques and the bond lead (28) is connected to the gold layer (20) by applying a combination of pressure and vibrational energy.

Bumpless bonding process having multilayer metallization

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Bumpless bonding process having multilayer metallization