Keith Fox
10 Papers
533 Citations
Keith Fox is an academic researcher. The author has contributed to research in topics: Plasma-enhanced chemical vapor deposition & Deposition (phase transition). The author has an hindex of 8, co-authored 10 publications.
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Papers
Patent
Smooth silicon-containing films
Keith Fox,Dong Niu,Joe Womack,Mandyam Sriram,George Andrew Antonelli,Bart van Schravendijk,Jennifer O'Loughlin +6 more
- 16 Dec 2010
TL;DR: In this paper, a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is described, the method including supplying a siliconcontaining reactant to the plasma enhanced chemical vaporization apparatus, supplying a co-reactant and a capacitively-coupled plasma to a process station of the plasmaenhanced CVPD apparatus, the plasma including silicon radicals generated from the silicon reactant and coreactant radicals generated by the co- reactant; and depositing the silicon containing film on the substrate, the silicon-
185
Patent
Plasma clean method for deposition chamber
Zhiyuan Fang,Pramod Subramonium,Jon Henri,Keith Fox +3 more
- 30 Oct 2013
TL;DR: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided in this article, which involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagents in a remote plasma generator and then further delivering in-situ plasma energy while the cleaned reagent mixture is introduced into the deposition room.
167
Patent
In-situ deposition of film stacks
J D Haverkamp,Pramod Subramonium,Joe Womack,Dong Niu,Keith Fox,John B. Alexy,Patrick Breiling,Jennifer O'Loughlin,Mandyam Sriram,George Andrew Antonelli,Bart van Schravendijk +10 more
- 16 Dec 2010
TL;DR: In this article, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is described.
65
Patent
Pecvd deposition of smooth silicon films
Alice Hollister,Sirish Reddy,Keith Fox,Mandyam Sriram,Joseph L. Womack +4 more
- 23 May 2012
TL;DR: In this paper, a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen was used to obtain smooth tensile silicon films.
37
Patent
Silicon nitride films for semiconductor device applications
Keith Fox,Dong Niu,Joseph L. Womack,Mandyam Sriram,George Andrew Antonelli,Bart van Schravendijk,Jennifer O'Loughlin +6 more
- 13 Feb 2013
TL;DR: In this paper, a plasma-enhanced chemical vapor deposition method and apparatus for depositing silicon nitride on a substrate is described, which can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor.
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