Kee Young Lim
Chonbuk National University
37 Papers
403 Citations
Kee Young Lim is an academic researcher from Chonbuk National University. The author has contributed to research in topics: Chemical vapor deposition & Layer (electronics). The author has an hindex of 11, co-authored 34 publications.
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Papers
Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer
TL;DR: In this paper, it was found that the SixNy inserting layer plays a very important role in the enhancement of crystal quality and surface morphology of GaN films, and the crystalline quality of overlying GaN layer grown on six-nny inserting layer depends on the deposition time of SixNny Insertion Layer.
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Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
M. G. Cheong,K. S. Kim,C. S. Oh,N. W. Namgung,Gye Mo Yang,Chang-Hee Hong,Kee Young Lim,Eun-Kyung Suh,K. S. Nahm,Hyung Jae Lee,D. H. Lim,A. Yoshikawa +11 more
TL;DR: In this paper, temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that the Hall-mobility values of different samples vary parallel with each other with temperature.
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Lateral wet oxidation of AlxGa1−xAs‐GaAs depending on its structures
TL;DR: In this paper, the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions, and the oxidation length decreases with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm.
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Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate
Kisoo Kim,Chang Seok Oh,Kang Jea Lee,Gye Mo Yang,Chang-Hee Hong,Kee Young Lim,Hyung Jae Lee,Akihiko Yoshikawa +7 more
TL;DR: In this paper, the effects of the growth rate of a buffer layer grown on a GaN epilayer were studied. And it was found that this growth rate plays a key role in improving the quality of the GaN film on a sapphire substrate and an optimum growth rate exists that yields the best crystal quality.
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Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures
TL;DR: In this paper, the influence of growth interruption when group-III sources are temporarily shut off on the optical quality of GaN/AlGaN single quantum well (QW) structures was studied to realize high quality QWs.
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