Kazuhito Tsukagoshi
National Institute for Materials Science
439 Papers
4.2K Citations
Kazuhito Tsukagoshi is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 62, co-authored 409 publications. Previous affiliations of Kazuhito Tsukagoshi include Osaka University & University of Cambridge.
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Papers
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
TL;DR: In this article, the Y function method (YFM) was introduced to evaluate the low-field mobility without the access or contact resistance influence in pentacene OFETs, and the YFM proved to be a fast and precise alternative method for the contact resistance evaluation, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage.
Origin of low-frequency noise in pentacene field-effect transistors
TL;DR: In this article, the power spectral density (PSD) of low-frequency noise (LFN) in pentacene field-effect transistors was analyzed and the authors found that the trap densities in bottom contact (BC) devices were higher than in their top contact (TC) counterparts, in agreement with observations of a poorer crystal structure of BC devices, in particular.
Silicon-doped indium oxide – a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method
Ha Hoang,Kazutaka Sasaki,Tatsuki Hori,Kazuhito Tsukagoshi,Toshihide Nabatame,Bui Nguyen Quoc Trinh,Bui Nguyen Quoc Trinh,Akihiko Fujiwara +7 more
- 30 Sep 2019
TL;DR: In this paper, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm2/Vs without the passivation layer.
Charge injection process in organic field-effect transistors
TL;DR: In this article, a charge injection process in top-contact organic field-effect transistors was observed with displacement of the Fermi level as a result of scanning the gate voltage, which revealed the bulk transport of the injected charges from the contact metal into the channel.
Extraction of low-frequency noise in contact resistance of organic field-effect transistors
Yong Xu,Takeo Minari,Kazuhito Tsukagoshi,Romain Gwoziecki,Romain Coppard,Francis Balestra,J. A. Chroboczek,Gerard Ghibaudo +7 more
TL;DR: In this article, the power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors was evaluated by the transfer-line method, and the obtained gate-voltage dependent SRsd was then normalized by the square of contact resistance.