Katsunori Ueno
General Electric
98 Papers
1K Citations
Katsunori Ueno is an academic researcher from General Electric. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 15, co-authored 86 publications.
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Papers
Patent
Method for producing a semiconductor device, and semiconductor device
Shinya Takashima,Ryo Tanaka,Katsunori Ueno,Masaharu Edo +3 more
- 08 Sep 2015
TL;DR: In this paper, a method for producing a semiconductor device having a nitride-based semiconductor layer includes forming an aluminum nitride layer on a surface of the n-GaN layer at a forming temperature and in a growth atmosphere for aluminium nitride, at a treatment temperature that is higher than the forming temperature, and in an atmosphere in which growth and decomposition of AlN are substantially balanced.
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Patent
Silicon carbide insulated gate semiconductor device
Katsunori Ueno,勝典 上野 +1 more
- 18 Jan 2007
TL;DR: In this paper, the authors proposed a silicon carbide insulated gate semiconductor device whose on-state resistance can be reduced even if it is formed in a combined structure wherein the benefit of the normally off characteristic of the insulated gate field effect transistor structure is obtained while utilizing the advantages of the static induction transistor structure.
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Patent
Mis semiconductor device and its manufacturing method
Yuichi Harada,Daisuke Kishimoto,Takei Manabu,Katsunori Ueno,勝典 上野,祐一 原田,大輔 岸本,学 武井 +7 more
- 21 Nov 2000
TL;DR: In this paper, the authors proposed a method for manufacturing the semiconductor device which comprises the steps of forming a gate electrode 3 on a semiconductor substrate 1 via an insulating film 2, and forming a p-type base region 6 and an n+ type emitter region 7 on a thin film semiconductor layer 11 formed on the electrode 3 via a coupled semiconductor 12 from the surface of the substrate 1.
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Patent
Method of manufacturing silicon carbide schottky diode
Katsunori Ueno,Urushiya Tanio,Hashimoto Koichi,Shinji Ogino,Seki Yasukazu +4 more
- 11 Oct 1996
TL;DR: In this paper, the authors proposed a method to enable an electrode to form a SiC and an alloyed layer by a method wherein, after coating the surface of an n type SiC semiconductor element assembly with an electrode layer made of Al and Ti, the whole body is heat-treated within a specific temperature range.
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Patent
Method of manufacturing semiconductor device, and semiconductor device
Michio Nemoto,Katsunori Ueno,勝典 上野,道生 根本 +3 more
- 12 Jun 2007
TL;DR: In this paper, the authors proposed a method to produce a semiconductor device in which IGBT and FWD are incorporated in a single semiconductor chip by diffusing impurities into only a scribing region 54 from the surface side of wafer so as to form a deep cathode region 32, the wafer is ground from its backside such that the cathode regions 32 is exposed to the ground surface.
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