Kangsoo Lee
Singapore Science Park
8 Papers
62 Citations
Kangsoo Lee is an academic researcher from Singapore Science Park. The author has contributed to research in topics: Thin film & Diffusion barrier. The author has an hindex of 5, co-authored 8 publications.
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Papers
Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2
TL;DR: In this article, the diffusion barrier properties of IMP deposited TaN between Cu and SiO 2 have been investigated in the Cu (200mm)/TaN (30mm)/SiO 2 (250nm)/Si multi-layer structure.
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Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2
TL;DR: In this article, the diffusion barrier properties of ionized metal plasma (IMP) deposited Ta between Cu and SiO 2 have been investigated in the Cu (200 nm)/Ta (30 nm)/SiO 2 (250 nm) multi-layer structure.
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Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure
TL;DR: In this paper, the properties of ionized metal plasma (IMP) deposited copper (Cu) and chemical vapor deposited (CVD) Cu on IMP-TaN (tantalum nitride) diffusion barrier in the Cu(200 nm)/TaN(30 nm)/SiO2(250 nm)Si multi-layer structure were investigated.
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Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
TL;DR: In this paper, the properties of electroplated copper (Cu) film on a thin seed layer of ionized metal plasma deposited Cu have been investigated as a function of annealing temperatures together with the diffusion barrier performance.
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Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2
TL;DR: In this paper, a comparison of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-Tantalum nitride (TaN) has been investigated in the Cu(200 nm)/TaN(30 nm)/SiO2(250 nm) multi-layer structure.
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