Kaihui Liu
Peking University
347 Papers
1K Citations
Kaihui Liu is an academic researcher from Peking University. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 52, co-authored 269 publications. Previous affiliations of Kaihui Liu include Wuhan University of Technology & Southern University of Science and Technology.
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Papers
Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
Kaihui Liu,Liming Zhang,Ting Cao,Chenhao Jin,Diana Y. Qiu,Qin Zhou,Alex Zettl,Peidong Yang,Steve G. Louie,Feng Wang +9 more
TL;DR: This work demonstrates the evolution of interlayer coupling with twist angles in as-grown molybdenum disulfide bilayers and finds that the indirect bandgap size varies appreciably with the stacking configuration: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constantRedshift for all other twist angles.
Characterization of a cage form of the water hexamer
Kaihui Liu,M. G. Brown,Cameron S. Carter,Richard J. Saykally,Jonathon K. Gregory,David C. Clary +5 more
TL;DR: In this article, the structure of the water hexamer was investigated by terahertz laser vibration-rotation tunnelling spectroscopy, and it was shown that the hexamer is a cage-like structure, held together by eight hydrogen bonds.
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Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.
Li Wang,Li Wang,Xiaozhi Xu,Leining Zhang,Ruixi Qiao,Muhong Wu,Zhichang Wang,Shuai Zhang,Jing Liang,Zhihong Zhang,Zhibin Zhang,Wang Chen,Xuedong Xie,Junyu Zong,Yuwei Shan,Yi Guo,Marc Georg Willinger,Hui Wu,Qunyang Li,Wenlong Wang,Peng Gao,Shiwei Wu,Yi Zhang,Ying Jiang,Ying Jiang,Dapeng Yu,Enge Wang,Xuedong Bai,Zhu-Jun Wang,Feng Ding,Kaihui Liu +30 more
TL;DR: The epitaxial growth of large single-crystal hexagonal boron nitride monolayers on low-symmetry copper foils is demonstrated and is expected to facilitate the wide application of 2D devices and lead to the epitaxials growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20–23, to produce large single crystals.
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
Xiaozhi Xu,Zhihong Zhang,Jichen Dong,Ding Yi,Jingjing Niu,Muhong Wu,Li Lin,Rongkang Yin,Mingqiang Li,Jingyuan Zhou,Shaoxin Wang,Junliang Sun,Xiaojie Duan,Peng Gao,Ying Jiang,Xiaosong Wu,Hailin Peng,Rodney S. Ruoff,Zhongfan Liu,Dapeng Yu,Dapeng Yu,Enge Wang,Feng Ding,Kaihui Liu +23 more
TL;DR: In this article, the growth of a single-crystal graphene film of 5 × 50 cm2 dimension with > 99% ultra-highly oriented grains was achieved by using a temperature gradient-driven annealing technique.
540
Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films
Hua Yu,Mengzhou Liao,Wenjuan Zhao,Guodong Liu,Xuejun Zhou,Zheng Wei,Xiaozhi Xu,Kaihui Liu,Zonghai Hu,Ke Deng,Shuyun Zhou,Jinan Shi,Lin Gu,Cheng Shen,Tingting Zhang,Luojun Du,Luojun Du,Li Xie,Jianqi Zhu,Wei Chen,Rong Yang,Dongxia Shi,Guangyu Zhang +22 more
TL;DR: The wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.
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