: Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 deg C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

/pdf/continuous-ultra-thin-mos2-films-grown-by-low-temperature-cny5a8vf4w.pdf

Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)

Spin–orbit coupling (SOC) in two-dimensional (2D) materials has emerged as a powerful tool for designing spintronic devices. On the one hand, the interest in this respect for graphene, the most popular 2D material with numerous fascinating and exciting properties, is fading due to the absence of SOC. On the other hand, 2D transition metal dichalcogenides (TMDs) are known to exhibit rich physics including large SOC. TMDs have been used for decades in a variety of applications such as nano-electronics, photonics, optoelectronics, sensing, and recently also in spintronics. Here, we review the current progress in research on 2D TMDs for generating spin–orbit torques in spin-logic devices. Several challenges connecting to thin film growth, film thickness, layer symmetry, and transport properties and their impact on the efficiency of spintronic devices are reviewed. How different TMDs generate spin–orbit torques in magnetic heterostructures is discussed in detail. Relevant aspects for improving the quality of the thin film growth as well as the efficiency of the generated spin–orbit torques are discussed together with future perspectives in the field of spin-orbitronics.

Emergence of spin–orbit torques in 2D transition metal dichalcogenides: A status update

Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.

https://www.onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202000991

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure.

High-quality, continuous transition-metal dichalcogenide (TMD) thin films with large-area coverage are the prerequisites for practical device applications. To address the growing demand, here we re...

WS2 Nanosheet/Si p–n Heterojunction Diodes for UV–Visible Broadband Photodetection

Graphene and two-dimensional (2D) materials have experienced an outstanding development in the last few years. The confinement of the carriers and the improved electrostatic control in the thin channels of fabricated devices have demonstrated surprising results in terms of electrical, photonic, and mechanical properties. However, these properties are still dependent on the fabrication process. Thickness, roughness, scalability, mobility, or defect density are closely related to the specific synthesis method. In this chapter, we describe the main synthesis methods for the fabrication of graphene and other 2D materials with extraordinary properties. Potentially, the van der Waals interaction between 2D crystals offer a platform for alternating disparate atomic layers in both vertical and lateral fashion, creating hybrid heterostructures with a variety of exciting physical phenomena in increasingly sophisticated devices.

Synthesis of graphene and other two-dimensional materials

In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering

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Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering