Novel anti-ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi-valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions are studied, of which the AAT devices consist of vertically stacked p-SnS and n- MoSe2 nanoflakes to form a type-II staggered band alignment. An electrostatically tunable p-SnS/n-MoSe2 cryo-phototransistor is presented with unique anti-ambipolar characteristics and cryogenic-enhanced optoelectronic performance. The cryo-phototransistor exhibits a sharp and highly symmetric anti-ambipolar transfer curve at 77 K with the peak-to-valley ratio of 103 operating under a low bias voltage of 1 V. The high cooling-enhanced charge mobilities in the cryo-phototransistor grant this AAT device remarkable photodetection capabilities. At 77 K, the p-SnS/n-MoSe2 cryo-phototransistor, holding a broad photoresponse in the spectral range of 250−900 nm, demonstrates its high responsivity of 2 × 104 A W−1 and detectivity of 7.5 × 1013 Jones with the excitation at 532 nm. The high-performance p-SnS/n-MoSe2 low-dimensional phototransistor with low operating voltages at 77−150 K is eligible for optoelectronic applications in cryogenic environments. Furthermore, the cryo-characteristics of this heterostructure can be further extended to design the mul-tivalued logic circuits operated in cryogenic conditions. 

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202300095

An Anti‐Ambipolar Cryo‐Phototransistor

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

In recent years, heterojunction photodetectors constructed of two-dimensional materials with no overhanging bonds and lattice mismatches have attracted wide attention due to the advantages of integrating different materials. Here, we report a high-performance photodetector with tunable dual auroral responses based on the semiconductor (ReSe2) and semimetal (PtSe2) heterojunctions, with a high reverse commutation ratio of 6.2 × 104 at room temperature. Under visible light irradiation, the photodetector, with an open circuit voltage of 0.2 V and a short circuit current of 19 pA, and a high on/off ratio of 5.5 × 104, exhibits a clear photovoltaic effect. At the same time, the photodetector shows a photoelectric responsivity and detectivity of 153 mA/W and 7.72 × 1011 Jones, respectively. The photodetector also shows a large wideband optical detection capability between ultraviolet and near-infrared light. Our work provides a model to develop future electronic and optoelectronic multifunctional devices based on a 2D semiconductor and a semimetal van der Waals heterojunction. 

High-Performance Photodetector Based on the ReSe2/PtSe2 van der Waals Heterojunction

Hybrid metal halide perovskites are characterized by excellent photoelectric properties with great tunability. By manipulation of their chemical composition, their crystal structure can be altered at the atomic level, leading to confined systems characterized by reduced dimensionality and distinct properties. Here, we provide an in-depth characterization of the structural and optoelectronic properties of 2D (NH4)3Sb2I9 perovskite single crystals in a wide temperature range (4.2–300 K). Upon cooling, changes in the material’s thermal expansion led to a strong increase in the photoluminescence (PL) intensity. Our findings define the underlying photophysics of this system and the structure–property relationships, thereby paving the way for the optimization and rational design of optoelectronic applications. 

Temperature-Dependent Evolution of the Structural and Optoelectronic Properties of (NH4)3Sb2I9 Single Crystals

Near‐infrared light‐emitting technology is ideal for noncontact diagnostic medical imaging and high‐speed data communications. High‐quality ReSe2 nanosheets of anisotropic single‐crystal structure with a bandgap of 1.26 eV (≈984 nm) are synthesized with an atmospheric pressure chemical vapor deposition (APCVD) method. The as‐synthesized ReSe2 nanosheets‐fabricated light‐emitting transistors (LETs) exhibit nearly symmetric ambipolar characteristics in electrical transport. Judicious selection of asymmetric platinum (Pt)/chromium (Cr) electrodes, with their work functions matching respectively the conduction‐ and valence‐band edges of ambipolar ReSe2, generates a low turn‐on voltage ReSe2‐LET with the balanced number density and field‐effect mobility of bipolar carriers (i.e., electrons and holes). Room‐temperature near‐infrared electroluminescence (NIR EL) from the frequency‐modulated ReSe2‐LET has been observed unprecedentedly with the assistance of a lock‐in detection system. The NIR EL intensity is tested by varying the bias voltage applied to the ReSe2‐LET devices with different channel lengths. The wavelength of the NIR EL from ReSe2‐LET is differentiated with optical bandpass filters. Room‐temperature angle‐dependent two lobe‐shaped EL pattern manifests the inherent anisotropic in‐plane excitonic polarization of the ReSe2 crystal. The highly stable NIR EL from ReSe2‐LETs provides prospective 2D material‐based ultrathin scalable data communication electronics for future development.

Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe2 Nanosheets

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Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe2 Nanosheets

An Anti‐Ambipolar Cryo‐Phototransistor