Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga2O3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga2O3, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga2O3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm2, power figure-of-merit of 13.2 GW/cm2, and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics applications. 

/pdf/ultra-wide-bandgap-semiconductor-ga2o3-power-diodes-qlj2s1bn.pdf

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called “Moore’s law” in the past 60 years, and now has entered the post Moore’s law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

Recent progress of integrated circuits and optoelectronic chips

In recent years, ultrawide bandgap semiconductor materials represented by aluminum nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good ultraviolet (UV) transmittance. They have great application prospects in the fields of high-efficiency optoelectronic devices, high-power and high-frequency electronic devices, ultra-high voltage power electronic devices, deep UV warning and guidance, and deep UV-LED disinfection. The physical vapor transport (PVT) method has the advantages of a simple growth process, fast growth rate, and high crystal integrity, and has gradually become one of the most effective methods for growing bulk AlN crystals. This review systematically summarizes the latest research progress in AlN crystals grown by the PVT method in recent years, and introduces their applications in deep UV-LEDs, UV lasers and Schottky barrier diodes (SBDs). Finally, the challenges and application prospects of AlN crystals are discussed. As an important new type of direct bandgap ultrawide bandgap semiconductor material, AlN crystals have shown extremely important strategic application value. The output power of deep UV-LED devices meets practical requirements, and high-power electronic power devices are still in the verification stage. From the perspective of material superiority, they have considerable development potential.

Ultrawide-bandgap semiconductor AlN crystals: growth and applications

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate with 2-kV forward and reverse blocking voltages have been reported. Due to the designed AlGaN epitaxial layers, breakdown voltages (BVs) of the conventional AlGaN-channel HEMTs with $L_{GD} =5$ /10/15/ 20/ $25~\mu \text{m}$ are 420/1070/1590/1920/2000 V respectively, and the values are increased to 760/1420/1980/1990/2000 V by using Schottky-drain technique. The reverse-blocking HEMTs demonstrate reverse blocking voltages of −790/−1300/−1810/−2000 V for ${L}_{GD}=5$ /10/15/ $20~\mu \text{m}$ . Meanwhile, the conventional HEMT power figure-of-merit (FOM) of 397 MW/cm2 is the highest FOM for AlGaN-channel HEMTs on silicon, and the Schottky-drain HEMT forward FOM of 384 MW/cm2 and reverse FOM of 321 MW/cm2 are the highest FOM values for all GaN-based reverse-blocking HEMTs on silicon.

Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

In this letter, we report on demonstrating a Schottky barrier diode (SBD) with high reverse blocking voltage by incorporating an ultra-wide bandgap semiconductor Al0.85 Ga0.15 N channel. Benefited from the lower activation energy of the Si in GaN, the net carrier concentration of Al0.85 Ga0.15N can be essentially enhanced to ${2}\times {10}^{{17}}$ cm−3 level with surface roughness of 0.33 nm. Due to the good material property, a reverse blocking voltage of 2 kV and room temperature ideality factor of 2.3 are demonstrated. Combined with the significantly improved on-current and on/off ratio of more than 106 when compared with other AlN SBDs, Al0.85 Ga0.15 N turns out to be a competitive AlN counterpart by considering the compromise among ultra-wide bandgap, dopant activation, and material property.

Demonstration of a 2 kV Al 0.85 Ga 0.15 N Schottky Barrier Diode With Improved On-Current and Ideality Factor

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Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV

Demonstration of a 2 kV Al 0.85 Ga 0.15 N Schottky Barrier Diode With Improved On-Current and Ideality Factor